MICROSEMI APT50GS60BRDLG

APT50GS60BRDL(G)
600V, 50A, VCE(ON) = 2.8V Typical
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Resonant Mode Combi IGBT®
TO
The Thunderbolt HS™ IGBT used in this resonant mode combi is based on thin wafer non-punch through
(NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower
turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz,
approaching power MOSFET performance but lower cost.
-24
An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it
easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise and oscillation
immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's suitable for motor
drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi
versions are packaged with a high speed, soft recovery DL series diode.
Features
Single die
IGBT with
separate DL
7
G
C
C
E
G
E
Typical Applications
• Fast Switching with low EMI
• Tight parameter distribution
• ZVS Phase Shifted Bridge
• Very Low EOFF for Maximum Efficiency
• Easy paralleling
• Resonant Mode Switching
• Short circuit rated
• Low Forward Diode Voltage (VF)
• Phase Shifted Bridge
• Low Gate Charge
• Ultrasoft Recovery Diode
• Welding
• RoHS Compliant
• Induction heating
• High Frequency SMPS
Absolute Maximum Ratings
Symbol
Parameter
Rating
I C1
Continuous Collector Current TC = @ 25°C
93
I C2
Continuous Collector Current TC = @ 100°C
50
I CM
Pulsed Collector Current 1
195
VGE
Gate-Emitter Voltage
Unit
A
±30V
SSOA
Switching Safe Operating Area
195
tSC
Short Circut Withstand Time 3
10
V
μs
Thermal and Mechanical Characteristics
Total Power Dissipation TC = @ 25°C
RθJC
Junction to Case Thermal Resistance
RθCS
Case to Sink Thermal Resistance, Flat Greased Surface
TJ, TSTG
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Mounting Torque (TO-247), 6-32 M3 Screw
Max
Unit
W
-
-
415
-
-
0.30
Diode
Operating and Storage Junction Temperature Range
TL
Torque
IGBT
Typ
0.63
-
0.11
-
-55
-
150
-
-
300
-
0.22
-
-
5.9
-
g
-
-
10
in·lbf
-
-
1.1
N·m
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
Microsemi Website - http://www.microsemi.com
°C/W
°C
oz
11-2008
Min
Rev B
Parameter
052-6352
Symbol
PD
Static Characteristics
Symbol
VBR(CES)
∆VBR(CES)/∆TJ
Parameter
Collector-Emitter Breakdown Voltage
Breakdown Voltage Temperature Coeff
VCE(ON)
Collector-Emitter On Voltage 4
VGE(th)
Gate-Emitter Threshold Voltage
∆VGE(th)/∆TJ
Threshold Voltage Temp Coeff
ICES
Zero Gate Voltage Collector Current
IGES
Gate-Emitter Leakage Current
Dynamic Characteristics
Symbol
gfs
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Co(cr)
Reverse Transfer Capacitance
Charge Related 5
Co(er)
Reverse Transfer Capacitance
Current Related 6
Qg
Total Gate Charge
Gate-Emitter Charge
Ggc
Gate-Collector Charge
td(on)
Turn-On Delay Time
td(off)
tf
11-2008
Fall Time
Turn-On Switching Energy
Turn-On Switching Energy
9
Eoff
Turn-Off Switching Energy
10
td(on)
Turn-On Delay Time
Eon1
Typ
Max
Unit
600
-
-
V
Reference to 25°C, IC = 250μA
-
0.60
-
V/°C
VGE = 15V
IC = 50A
TJ = 25°C
-
2.8
3.15
TJ = 125°C
-
3.25
-
3
4
5
VGE = VCE, IC = 1mA
VCE = 600V,
VGE = 0V
V
-
6.7
-
TJ = 25°C
-
-
50
TJ = 125°C
-
-
1000
-
-
±100
nA
Min
Typ
Max
Unit
-
31
-
S
VGE = ±20V
VGE = 0V, VCE = 25V
f = 1MHz
VGE = 0V
VCE = 0 to 400V
Inductive Switching IGBT and
Diode:
Turn-Off Delay Time
Eon2
tf
Rev B
Rise Time
8
td(off)
Min
VGE = 0 to 15V
IC = 50A, VCE = 300V
Eon1
tr
Test Conditions
VGE = 0V, IC = 250μA
Test Conditions
VCE = 50V, IC = 50A
Forward Transconductance
Qge
APT50GS60BRDL(G)
mV/°C
μA
TJ = 25°C unless otherwise specified
Parameter
Cies
tr
052-6352
TJ = 25°C unless otherwise specified
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
8
Eon2
Turn-On Switching Energy
9
Eoff
Turn-Off Switching Energy 10
TJ = 25°C, VCC = 400V,
IC = 50A
RG = 4.7Ω 7, VGG = 15V
-
2635
-
-
240
-
-
145
-
-
115
-
pF
85
-
235
-
-
18
-
-
100
-
-
16
-
-
33
-
-
225
-
-
37
-
-
TBD
-
-
1.2
-
-
0.755
-
-
33
-
Inductive Switching IGBT and
Diode:
-
33
-
-
250
-
TJ = 125°C, VCC = 400V,
IC = 50A
RG = 4.7Ω 7, VGG = 15V
-
23
-
-
TBD
-
-
1.7
-
-
0.950
-
nC
ns
mJ
ns
mJ
TYPICAL PERFORMANCE CURVES
APT50GS60BRDL(G)
250
VGE = 15V
T = 125°C
J
125
IC, COLLECTOR CURRENT (A)
100
75
TJ = 25°C
50
TJ = 125°C
TJ = 150°C
11V
175
10V
150
125
9V
100
8V
75
7V
50
6V
0
0
5
10
15
20
25
30
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
250μs PULSE
TEST<0.5 % DUTY
CYCLE
125
100
75
TJ = 25°C
TJ = 125°C
25
0
0
2
4
6
8
10
12
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics
50
IC = 100A
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
4
IC = 50A
3
IC = 25A
2
1
0
IC = 100A
4
IC = 50A
3
IC = 25A
2
1
0
6
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
14
VCE = 120V
12
VCE = 300V
10
8
VCE = 480V
6
4
2
0
50
100
150
200
GATE CHARGE (nC)
FIGURE 6, Gate Charge
250
100
P
1000
Coes
Cres
0
100
200
300
400
500
600
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 7, Capacitance vs Collector-To-Emitter Voltage
IC, DC COLLECTOR CURRENT(A)
Cies
C, CAPACITANCE ( F)
5
0
0
5000
10
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
16
25
50
75
100
125
150
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Junction Temperature
100
6
FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage
VGE, GATE-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
= 13 & 15V
25
0
0
1
2
3
4
5
6
VCE(ON), COLLECTER-TO-EMITTER VOLTAGE (V)
150
GE
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
11-2008
25
V
200
Rev B
IC, COLLECTOR CURRENT (A)
225
052-6352
150
TYPICAL PERFORMANCE CURVES
16
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
18
VGE = 15V
14
12
10
8
6
4 VCE = 400V
TJ = 25°C, TJ =125°C
2 RG = 4.7Ω
0
L = 100μH
250
20
40
60
80
100
120
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
VGE =15V,TJ=125°C
200
VGE =15V,TJ=25°C
150
100
50 VCE = 400V
RG = 4.7Ω
0
0
100
APT50GS60BRDL(G)
300
20
L = 100μH
0
20
40
60
80
100
120
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
80
RG = 4.7Ω, L = 100μH, VCE = 400V
RG = 4.7Ω, L = 100μH, VCE = 400V
70
TJ = 25 or 125°C,VGE = 15V
60
tf, FALL TIME (ns)
tr, RISE TIME (ns)
80
60
40
50
40
TJ = 125°C, VGE = 15V
30
20
20
TJ = 25°C, VGE = 15V
10
0
0
0
20
40
60
80
100
120
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
2500
V
= 400V
CE
V
= +15V
GE
R = 4.7Ω
EOFF, TURN OFF ENERGY LOSS (μJ)
EON2, TURN ON ENERGY LOSS (μJ)
6000
G
5000
TJ = 125°C,VGE =15V
4000
0
20
40
60
80
100
120
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
3000
2000
1000
TJ = 25°C,VGE =15V
0
20
40
60
80
100
120
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
J
Eon2,100A
Eoff,100A
4
Eon2,50A
Eoff,50A
2
0
Eoff,25A
Eon2,25A
0
1500
1000
500
TJ = 25°C, VGE = 15V
6
8
6
TJ = 125°C, VGE = 15V
0
20
40
60
80
100
120
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (mJ)
SWITCHING ENERGY LOSSES mJ)
11-2008
Rev B
052-6352
V
= 400V
CE
V
= +15V
GE
T = 125°C
G
2000
0
0
10
V
= 400V
CE
V
= +15V
GE
R = 4.7Ω
V
= 400V
CE
V
= +15V
GE
R = 4.7Ω
G
5
Eon2,100A
4
3
Eoff,100A
2
Eon2,50A
Eoff,50A
1
Eon2,25A
0
Eoff,25A
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT50GS60BRDL(G)
200
200
100
ICM
VCE(on)
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
100
13μs
100μs
1ms
10ms
1
100ms
DC line
0.1
TJ = 125°C
TC = 75°C
ICM
VCE(on)
10
13μs
100μs
1ms
10ms
TJ = 150°C
TC = 25°C
1
0.1
1
10
100
800
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 17, Forward Safe Operating Area
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
IC = IC(T = 25°C)*(TJ - TC)/125
C
1
10
100
800
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 18, Maximum Forward Safe Operating Area
0.30
0.9
0.25
0.7
0.20
0.5
0.15
Note:
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.35
0.3
0.10
t1
t2
0.05
0
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
0.1
0.05
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
0.00606
0.260
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 20, Transient Thermal Impedance Model
75°C
100
F max = min (f max, f max2)
0.05
f max1 =
t d(on) + tr + td(off) + tf
80
60
40
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 400V
CE
R = 4.7Ω
20
0
G
0
100°C
f max2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
10
20 30 40 50 60 70 80 90
IC, COLLECTOR CURRENT (A)
Figure 21, Operating Frequency vs Collector Current
11-2008
0.226
120
Rev B
0.0731
Dissipated Power
(Watts)
140
052-6352
TC (°C)
ZEXT
TJ (°C)
FMAX, OPERATING FREQUENCY (kHz)
160
APT50GS60BRDL(G)
APT50DL60
Gate Voltage
10%
TJ = 125°C
td(on)
tr
IC
V CC
Collector Current
V CE
90%
5%
10%
A
5%
Collector Voltage
Switching Energy
D.U.T.
Figure 23, Turn-on Switching Waveforms and Definitions
Figure 22, Inductive Switching Test Circuit
Gate Voltage
TJ = 125°C
90%
td(off)
Collector Voltage
90%
tf
10%
Collector Current
0
Switching Energy
Figure 24, Turn-off Switching Waveforms and Definitions
052-6352
Rev B
11-2008
FOOT NOTE:
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
3 Short circuit time: VGE = 15V, VCC ≤ 600V, TJ ≤ 150°C
4 Pulse test: Pulse width < 380μs, duty cycle < 2%
5 Co(cr) is defined as a fixed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES.
6 Co(er) is defined as a fixed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of
VCE less than V(BR)CES, use this equation: Co(er) = 5.57E-8/VDS^2 + 7.15E-8/VDS + 2.75E-10.
7 RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452).
8 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the
IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode.
9 Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy.
10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
DYNAMIC CHARACTERISTICS
APT50GS60BRDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
IF(AV)
IF(RMS)
IFSM
APT50GS60BRDL(G)
Characteristic / Test Conditions
Maximum Average Forward Current (TC = 124°C, Duty Cycle = 0.5)
UNIT
50
RMS Forward Current (Square wave, 50% duty)
150
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
320
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
Characteristic / Test Conditions
Forward Voltage
MIN
TYP
MAX
IF = 50A
1.25
1.6
IF = 100A
2.0
IF = 50A, TJ = 125°C
UNIT
Volts
1.25
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
trr
Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C
F
F
R
J
-
52
trr
Reverse Recovery Time
-
399
Qrr
Reverse Recovery Charge
-
1498
-
9
-
649
ns
-
3734
nC
-
13
-
284
ns
-
5134
nC
-
34
Amps
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 50A, diF/dt = -1000A/μs
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
-
-
Amps
Amps
0.7
0.6
0.5
0.4
0.3
Note:
0.2
PDM
t1
t2
0.1
0
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (°C)
TC (°C)
0.316
Dissipated Power
(Watts)
0.00467
0.312
0.1483
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
11-2008
ZθJC, THERMAL IMPEDANCE (°C/W)
IRRM
IF =50A, diF/dt = -200A/μs
nC
Rev B
IRRM
VR = 400V, TC = 25°C
ZEXT
IRRM
IF = 50A, diF/dt = -200A/μs
ns
052-6352
Symbol
TYPICAL PERFORMANCE CURVES
APT50GS60BRDL(G)
700
120
TJ= 125°C
trr, COLLECTOR CURRENT (A)
IF, FORWARD CURRENT (A)
100
TJ= 55°C
80
TJ= 25°C
60
40
20
0
0.5
1.0
1.5
2.0
2.5
3.0
VF, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
100A
R
7000
6000
50A
5000
25A
4000
3000
2000
1000
0
0.8
CJ, JUNCTION CAPACITANCE (pF)
11-2008
Rev B
200
100
40
T = 125°C
J
V = 400V
R
50A
100A
35
30
25A
25
20
15
10
5
0
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
70
IRRM
50
40
30
20
0.2
10
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
500
052-6352
25A
300
60
0.4
0
400
tRR
QRR
0.6
50A
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1.2
1.0
500
45
T = 125°C
J
V = 400V
R
600
0
IRRM, REVERSE RECOVERY CURRENT
(A)
Qrr, REVERSE RECOVERY CHARGE
(nC)
0
8000
T = 125°C
J
V = 400V
100A
TJ= 150°C
450
400
350
300
250
200
150
100
50
0
0
10
100
400
VR, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
0
Duty cycle = 0.5
TJ = 126°C
25
50
75
100
125
150
175
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
Vr
diF /dt Adjust
+18V
0V
D.U.T.
trr/Qrr
Waveform
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
1
4
6
Zero
5
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
3
2
0.25 IRRM
Slope = diM/dt
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 (B) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Collector
(Cathode)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Collector (Cathode)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6352
Rev B
Dimensions in Millimeters and (Inches)
11-2008
Emitter (Anode)