NAINA 150KR60

45L/150K
NAINA
SILICON POWER DIODE
DO - 8
FEATURES
• Diffused Series
• Available in Normal & Reverse Polarity
• Industrial Grade
• Available In Avalanche Characteristic
ELECTRICAL SPECIFICATIONS
IF
Maximum Average Forward
Current Te=1500C
Maximum peak forward
voltage drop @ Rated IF(AV)
Maximum peak one cycle
(non-rep) surge current 10 m sec
Maximum peak repetitive
surge current
Maximum I2t rating (non-rep.) for
5 to 10 msec.
V FM
IFSM
IFRM
I2t
150A
1.4V
3570A
750A
64,000 A2 Sec
THERMAL MECHANICAL SPECIFICATIONS
θ JC
Tj
Tstg
W
Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
Mounting torque
(Non-lubricated threads)
Approx, weight
0.250C/W
-650C to 1500C
-650C to 2000C
2.0 M-kg min,
3.0 M-kg max
150 gms.
ELECTRICAL RATINGS
TYPE
45L/150K
VRRM
Max. repetitive peak reverse
voltage (v)
10
20
40
60
80
100
120
140
160
100
200
400
600
800
1000
1200
1400 1600
VR(RMS)
Max. R.M.S. reverse voltage (V)
70
140
280
420
560
700
840
980
VR
Max. D.C. Blocking Voltage (V)
100
200
400
600
800
1000
1200
1400 1600
40
80
160
240
320
400
480
560
640
200
200
200
200
200
200
200
200
200
IR(AV)
Recommended R.M.S. working
Voltage(v)
Max. Average reverse leakage
current @ VRRM Tc 250C (uA)
NAINA SEMICONDUCTOR LTD.,
D-95,SECTOR-63, NOIDA(INDIA)
e-mail:[email protected], web site:www.nainasemi.com
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