Ω
0.100Ω
600V 54A
APT6010B2LL
APT6010LLL
APT6010B2LL* APT6010LLLG*
*G
POWER MOS 7
R
Denotes RoHS Compliant, Pb Free Terminal Finish.
MOSFET
B2LL
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
TO-264
LLL
D
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
MAXIMUM RATINGS
Symbol
T-MAX™
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT6010B2_LLL
UNIT
600
Volts
Drain-Source Voltage
54
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
690
Watts
Linear Derating Factor
5.52
W/°C
PD
TJ,TSTG
1
216
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
-55 to 150
°C
300
Amps
54
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 27A)
TYP
MAX
Volts
0.100
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
UNIT
6-2006
Characteristic / Test Conditions
050-7051 Rev F
Symbol
DYNAMIC CHARACTERISTICS
APT6010B2_LLL
Test Conditions
Characteristic
Symbol
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1250
Reverse Transfer Capacitance
f = 1 MHz
90
VGS = 10V
150
VDD = 300V
30
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
ID = 54A @ 25°C
td(off)
tf
19
VDD = 300V
RG = 0.6Ω
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
9
INDUCTIVE SWITCHING @ 25°C
6
885
VDD = 400V, VGS = 15V
6
ns
34
ID = 54A @ 25°C
Fall Time
nC
12
VGS = 15V
Turn-off Delay Time
pF
75
RESISTIVE SWITCHING
Rise Time
UNIT
6710
VGS = 0V
3
MAX
ID = 54A, RG = 5Ω
970
INDUCTIVE SWITCHING @ 125°C
1150
VDD = 400V VGS = 15V
ID = 54A, RG = 5Ω
µJ
1220
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
MIN
TYP
MAX
54
Continuous Source Current (Body Diode)
UNIT
Amps
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -54A, dl S/dt = 100A/µs)
790
ns
Q rr
Reverse Recovery Charge (IS = -54A, dl S/dt = 100A/µs)
18
µC
dv/
Peak Diode Recovery
dt
dv/
216
(Body Diode)
1.3
(VGS = 0V, IS = - 54A)
dt
5
Volts
8
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.18
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.06mH, RG = 25Ω, Peak IL = 54A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID54A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and inforation contained herein.
D = 0.9
0.7
0.12
0.5
Note:
0.08
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7051 Rev F
6-2006
0.20
0.16
0.3
t2
0.1
0
SINGLE PULSE
0.05
10-5
t1
Duty Factor D = t1/t2
0.04
10-4
°C/W
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
0.859
0.009
0.0202
0.293
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
100
80
60
40
TJ = +125°C
TJ = +25°C
20
0
TJ = -55°C
0
1
2
3
4
5
6
7
8
9
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
7.5V
100
80
7V
60
6.5V
40
6V
20
5.5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
NORMALIZED TO
V
= 10V @ 27A
GS
1.30
1.20
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
1.15
50
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
V
D
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 27A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
8V
0
60
0.0
-50
120
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
6-2006
140
VGS=15 &10V
050-7051 Rev F
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
160
ID, DRAIN CURRENT (AMPERES)
0.0656
Dissipated Power
(Watts)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
TC ( C)
ZEXT
TJ ( C)
0.0271
APT6010B2_LLL
140
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
= 54A
D
VDS=120V
VDS=300V
12
VDS=480V
8
4
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
120
Coss
100
Crss
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
140
V
td(off)
100
1,000
10mS
1
I
Ciss
C, CAPACITANCE (pF)
100µS
10,000
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
100
0
APT6010B2_LLL
20,000
220
G
120
= 400V
DD
R
= 5Ω
T = 125°C
J
V
DD
R
G
= 400V
= 5Ω
tr and tf (ns)
80
T = 125°C
60
J
L = 100µH
40
10
20
V
DD
G
30
40
5000
= 400V
V
DD
D
J
Eoff
diode reverse recovery
1500
1000
Eon
500
20
20
I
L = 100µH
10
10
= 5Ω
EON includes
Eon and Eoff (µJ)
50 60
70
80 90
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
T = 125°C
2000
6-2006
0
50 60
70
80
90
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
R
050-7051 Rev F
tr
20
2500
0
tf
60
td(on)
20
0
80
40
30
40
50
60
70 80 90
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
SWITCHING ENERGY (µJ)
td(on) and td(off) (ns)
L = 100µH
100
30
40
= 400V
= 54A
T = 125°C
4000
J
L = 100µH
EON includes
Eoff
diode reverse recovery
3000
2000
Eon
1000
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT6010B2_LLL
90%
Gate Voltage
10%
Gate Voltage
TJ125°C
TJ125°C
td(off)
td(on)
Drain Current
tr
tf
5%
Drain Voltage
90%
90%
10%
5%
Drain Voltage
Switching Energy
10%
0
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DS
ID
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
e1 SAC: Tin, Silver, Copper
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
6-2006
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7051 Rev F
Drain
Drain
20.80 (.819)
21.46 (.845)