ROITHNER C568-30V

LED CHIP LED C568-30V
SPECIFICATION OF LED CHIP
C568-30V
[Yellow Green]
1) Commodity Type and Physical Characteristics.
1. Material
InGaAlP/GaAs
2. Electrode
Top Side P (anode) side
Bottom Side N (cathode) side
3. Electrode Pattern
4. Chip Size
5. Chip Thickness
6. Emission Area
2) Electro-Optical Characteristics [Ta=25°C]
Parameters
Symbol Condition
Min.
Forward Voltage
Vf
If=20mA
Reverse Current
Ir
Vr=5V
Brightness
Iv
If=20mA
Power Intensity
Po
If=20mA
Peak Wavelength
If=20mA
562
λP
Spectral Radiation
If=20mA
∆λ
Bandwidth
RiseTime
tr
If=20mA
FallTime
tf
If=20mA
‡
: Au Alloy/Au or Au Pad
: Au Alloy
Fig.1
Fig.2
Fig.2
Fig.2
Typ.
2.0
14
0.05
565
Max.
2.3
10
570
Unit
V
uA
mcd
mW
nm
15
nm
-
ns
ns
Die shall be mounted on TO=18 gold header without resin coated.
[Unit : um]
Fig.1 Electrode Pattern
Fig.2 Chip size and Emission Area