Infrared LED Chip OPA9433LT GaAs/GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer GaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min VF(1) Forward Voltage VF(2) Reverse Voltage VR 8 Power PO 8 λP Wavelength Typ Max Unit Condition 1.3 V IF=20mA 1.57 V IF=100mA V IR=10uA 11 mW IF=100mA 940 nm IF=20mA ∆λ 45 nm IF=20mA ※ Note : Power is measured by Sorter E/T system with bare chip. (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height --------------------- 10.5mil x 10.5mil --------------------- 11.5mil x 11.5mil --------------------130um 7mil --------------------4.7mil --------------------- (b) (d) (a) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr N Epi (e) P Epi (c) Substrate 4. Mechanical Data (a) Emission Area N Side Electrode