SAVANTIC 2SC2371

SavantIC Semiconductor
Product Specification
2SC2371
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·High Voltage
·High frequency
APPLICATIONS
·For TV chroma output and vertical
output applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
0.1
A
ICM
Collector current-peak
0.2
A
PC
Collector power dissipation
Ta=25
1.25
TC=25
10
W
Tj
Junction temperature
150
Tstg
Storage temperature
-40~150
SavantIC Semiconductor
Product Specification
2SC2371
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEsat
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter saturation voltage
IC=30mA ;IB=3m A
1.5
V
Base-emitter on voltage
IC=10mA ; VCE=10V
1.2
V
V(BR)CBO
Collector-base breakdown voltage
IC=100µA;IE=0
300
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA; IB=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=100µA; IC=0
6
V
hFE
DC current gain
IC=10mA ; VCE=10V
40
ICBO
Collector cut-off current
VCB=200V; IE=0
0.1
µA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
µA
COB
Output capacitance
IE=0; VCB=30V;f=1MHz
fT
Transition frequency
IE=10mA ; VCB=30V
VBE
2
250
3
50
pF
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SC2371