SavantIC Semiconductor Product Specification 2SC2460 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SA1050 ·Excellent safe operating area APPLICATIONS ·For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 5 V 12 A 100 W IC Collector current PC Collector power dissipation Tj Junction temperature 175 Tstg Storage temperature -55~200 TC=25 SavantIC Semiconductor Product Specification 2SC2460 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 140 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 140 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V Collector-emitter saturation voltage IC=8A; IB=0.8A 2.5 V VBE Base-emitter on voltage IC=6A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=140V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=1A ; VCE=5V 55 hFE-2 DC current gain IC=6A ; VCE=-5V 35 Transition frequency IC=1A ; VCE=10V VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 240 70 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SC2460