SavantIC Semiconductor Product Specification 2SC2752 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·Low power switching regulator ·DC-DC converter ·High voltage switch PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 0.5 A ICM Collector current-peak 1.0 A IB Base current 0.25 A PC Collector power dissipation Ta=25 1.0 TC=25 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC2752 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.3A; IB1=0.06A,L=10mH VCEsat Collector-emitter saturation voltage IC=300mA; IB=60mA 1.0 V VBEsat Base-emitter saturation voltage IC=300mA; IB=60mA 1.2 V ICEX Collector cut-off current VCE=400V; VBE=-1.5V TC=125 0.01 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=50mA ; VCE=5V 20 hFE -2 DC current gain IC=300mA ; VCE=5V 10 400 UNIT V 80 Switching times ton Turn-on time tstg Storage time tf IC=300mA; IB1=-IB2=60mA PW?50µs;VCC?150V RL=500A Fall time hFE-1 Classifications M L K 20-40 30-60 40-80 2 1.0 µs 2.5 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC2752