SavantIC Semiconductor Product Specification 2SC2899 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High voltage,high speed APPLICATIONS ·For high speed and high voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 0.5 A ICM Collector current-peak 1.0 A PC Ta=25 0.75 TC=25 10 W Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC2899 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; RBE=:,L=100mH 400 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=250mA; IB=50m A 1.0 V VBEsat Base-emitter saturation voltage IC=250mA ;IB=50m A 1.5 V hFE-1 DC current gain IC=250mA ; VCE=5V 15 hFE-2 DC current gain IC=500mA ; VCE=5V 7 ICBO Collector cut-off current VCB=400V; IE=0 20 µA ICEO Collector cut-off current VCE=350V; RBE=: 50 µA 1.0 µs 2.0 µs 1.0 µs Switching times ton Turn-on time tstg Storage time tf IC=0.5A; IB1=-IB2=0.1A VCC?150V Fall time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC2899 SavantIC Semiconductor Product Specification 2SC2899 Silicon NPN Power Transistors 4