SAVANTIC 2SD866A

SavantIC Semiconductor
Product Specification
2SD866 2SD866A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Low collector saturation voltage
·Excellent linearity of hFE
·High collector current
APPLICATIONS
·For power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
2SD866
VCBO
Collector-base voltage
80
Open base
2SD866A
VEBO
Emitter-base voltage
V
150
2SD866
Collector-emitter voltage
UNIT
130
Open emitter
2SD866A
VCEO
VALUE
V
100
Open collector
7
V
IC
Collector current
7
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD866 2SD866A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
2SD866
MIN
TYP.
MAX
UNIT
80
IC=0.2A; IB=0
2SD866A
V
100
VCEsat
Collector-emitter saturation voltage
IC=5 A;IB=0.25 A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=5 A;IB=0.25 A
1.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
µA
hFE-1
DC current gain
IC=0.1A ; VCE=2V
45
hFE-2
DC current gain
IC=3A ; VCE=2V
60
Transition frequency
IC=0.5A ; VCE=10V
fT
260
30
MHz
0.5
µs
1.5
µs
0.1
µs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A;IB1=-IB2=0.3 A
hFE-2 classifications
R
Q
P
60-120
90-180
130-260
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD866 2SD866A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3