SavantIC Semiconductor Product Specification 2SC4105 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 4 A ICM Collector current-Peak 8 A IB Base current 1.5 A PC Collector dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC4105 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=: 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=0.4A ; VCE=5V 15 hFE-2 DC current gain IC=2A ; VCE=5V 10 hFE-3 DC current gain IC=10mA ; VCE=5V 10 Transition frequency IC=0.4A ; VCE=10V 20 MHz Collector output capacitance f=1MHz ; VCB=10V 50 pF fT Cob CONDITIONS MIN TYP. MAX UNIT 50 Switching times ton Turn-on time ts Storage time tf Fall time IC=3A, IB1=0.6A IB2=-1.2A; VCC=200V RL=66.6B hFE-1 Classifications L M N 15-30 20-40 30-50 2 0.5 µs 2.5 µs 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC4105 SavantIC Semiconductor Product Specification 2SC4105 Silicon NPN Power Transistors 4