SavantIC Semiconductor Product Specification 2SC3087 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High breakdown voltage : VCBO=800V(Min) ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·500V/5A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V 5 A 10 A 2 A IC Collector current ICP Collector current-peak IB Base current PC Collector dissipation PW4300µs, Duty Cycle410% TC=25 50 W 1.75 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3087 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=4mA ; RBE=A 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.6 A 1.0 V VBE(sat) Base-emitter saturation voltage IC=3A; IB=0.6 A 1.5 V ICBO Collector cut-off current VCB=500V ;IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=0.6A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=5V 8 fT Transition frequency IC=0.6A ; VCE=10V 18 MHz COB Output capacitance f=10MHz ; VCB=10V 80 pF 50 Switching times ton Turn-on time tstg Storage time tf VCC=200V; IC=4A IB1=0.8A;IB2=-0.8A; RL=50F Fall time hFE-1 classifications L M N 15-30 20-40 30-50 2 1.0 µs 3.0 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC3087