SAVANTIC 2SC2831

SavantIC Semiconductor
Product Specification
2SC2831 2SC2831A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·High VCBO
·High speed switching
APPLICATIONS
·For high speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
Emitter
3
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
2SC2831
VCBO
Collector-base voltage
VALUE
UNIT
800
Open emitter
2SC2831A
V
900
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
500
V
8
V
1.5
A
3
A
0.5
A
25
W
IC
Collector current
ICM
Collector current-peak
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC2831 2SC2831A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A; L=25mH
VCE(sat)
Collector-emitter saturation voltage
IC=1A; IB=0.2A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=1A; IB=0.2A
1.5
V
100
µA
100
µA
ICBO
Collector
cut-off current
2SC2831
2SC2831A
CONDITIONS
MIN
MAX
500
UNIT
V
VCB=800V;IE=0
VCB=900V;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=1A ; VCE=5V
8
Transition frequency
IC=0.2A ; VCE=10V
fT
TYP.
2.5
MHz
Switching times
ton
tstg
2SC2831
1.0
2SC2831A
1.2
Turn-on time
µs
IC=1A ; IB1=-IB2=-0.2A
VCC=200V
Storage time
2SC2831
tf
3.0
µs
1.0
Fall time
µs
2SC2831A
1.2
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2831 2SC2831A
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3