Inchange Semiconductor Product Specification 2SC3211 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 5 A ICP Collector current-peak 10 A IB Base current 3 A PC Collector power dissipation TC=25℃ 70 Ta=25℃ 3 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3211 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;L=25mH VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBE(sat) Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=5V 8 Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS MIN TYP. MAX 500 UNIT V 3 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=3A; IB1=-IB2=0.6A VCC=200V 2 1.0 μs 3.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3211 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.3mm) 3