ISC 2SD2579

Inchange Semiconductor
Product Specification
2SD2579
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3PML package
・High speed
・High breakdown voltage
・High reliability
APPLICATIONS
・Color TV horizontal deflection output
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
8
A
ICM
Collector current-peak
20
A
PC
Collector power dissipation
TC=25℃
60
W
3
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
1
Inchange Semiconductor
Product Specification
2SD2579
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=5 A;IB=1A
5
V
VBEsat
Base-emitter saturation voltage
IC=5 A;IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=800V ;IE=0
10
μA
ICES
Collector cut-off current
VCE=1500V ;RBE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1.0
mA
hFE-1
DC current gain
IC=5A ; VCE=5V
5
8
hFE-2
DC current gain
IC=1A ; VCE=5V
20
35
Fall time
IC=4A;RL=50Ω
IB1=0.8A;-IB2=1.6A;VCC=200V
tf
CONDITIONS
2
MIN
TYP.
MAX
800
UNIT
V
0.3
μs
Inchange Semiconductor
Product Specification
2SD2579
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SD2579
Silicon NPN Power Transistors
4