SAVANTIC 2SD1376

SavantIC Semiconductor
Product Specification
2SD1344
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage
·Built-in damper diode
APPLICATIONS
·For color TV horizontal deflection
output applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
6
A
50
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-40~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1344
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100m A;IB=0
600
V
V(BR)EBO
Emitter-base breakdown voltage
IE=200m A;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=4A;IB=0.8 A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4A;IB=0.8 A
1.5
V
ICBO
Collector cut-off current
VCB=800V;IE=0
10
µA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
10
hFE-2
DC current gain
IC=3A ; VCE=5V
5
Diode forward voltage
IF=4A
2.0
V
VF
CONDITIONS
2
MIN
TYP.
MAX
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD1344