SavantIC Semiconductor Product Specification 2SD898 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Built-in damper diode ·High voltage ,high power dissipation ·Wide area of safe operation APPLICATIONS ·For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 1500 V VEBO Emitter-base voltage Open collector 6 V 3 A 3.5 A 50 W IC Collector current ICM Collector current-peak PT Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD898 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX 6 UNIT Emitter-base breakdown voltage IE=200mA; IC=0; V VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8 A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A;IB=0.8 A 1.5 V ICES Collector cut-off current VCE=1500V;RBE=0 0.5 mA IEBO Emitter cut-off current VEB=6V;IC=0 50 200 mA hFE DC current gain IC=0.5A ; VCE=5V 10 40 VF Diode forward voltage IF=3A 2.2 2 V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD898