SAVANTIC 2SD1729

SavantIC Semiconductor
Product Specification
2SD1729
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·Built-in damper diode
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For horizontal deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
3.5
A
ICM
Collector current (Pulse)
10
A
IB
Base current
1.5
A
PC
Collector power dissipation
60
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1729
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Emitter-base breakdown voltage
IE=500mA; IC=0
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.8A
8.0
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.8A
1.5
V
VCB=750V; IE=0
10
µA
VCB=1500V; IE=0
1
mA
ICBO
hFE
7
UNIT
V
Collector cut-off current
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
VF
Diode forward voltage
IF=-3.5A,IB=0
5
25
2
MHz
2.0
V
Switching times
ts
Storage time
tf
Fall time
1.5
µs
0.2
µs
IC=3A; IB1=0.8A
IB2=-1.6A VCC=200V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
2SD1729