SAVANTIC 2SD2057

SavantIC Semiconductor
Product Specification
2SD2057
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·High voltage,high speed
·Built-in damper diode
·Wide area of safe operation
APPLICATIONS
·Horizontal deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VEBO
Emitter-base voltage
Open collector
VALUE
UNIT
1500
V
7
V
IC
Collector current
5
A
ICM
Collector current-peak
20
A
IB
Base current
4
A
PC
Collector power dissipation
Tj
Tstg
Max.operating junction temperature
Storage temperature
Ta=25
3
TC=25
100
W
150
-55~150
SavantIC Semiconductor
Product Specification
2SD2057
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Emitter-base breakdown voltage
IE=500mA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=1.2A
8.0
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1.2A
1.5
V
VCB=1000V; IE=0
30
µA
VCB=1500V; IE=0
0.3
mA
ICBO
7
UNIT
V
Collector cut-off current
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=5A ; VCE=10V
4.5
fT
Transition frequency
IC=1A ; VCE=10V;f=0.5MHz
VF
Diode forward voltage
IC=-6A ;IB=0
ts
Storage time
15
2
MHz
-2.3
V
12
µs
0.8
µs
IC=5A;IB1=-IB2=1.2A;LLeak=5µH
tf
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
2SD2057