Inchange Semiconductor Product Specification 2SD1846 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High voltage,high speed ・Built-in damper diode ・Wide area of safe operation APPLICATIONS ・Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3.5 A ICM Collector current -peak 10 A IB Base current 1.5 A PC Collector power dissipation Tj Tstg Max.operating junction temperature Storage temperature Ta=25℃ 3 TC=25℃ 60 W 150 ℃ -55~150 ℃ Inchange Semiconductor Product Specification 2SD1846 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=500mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A 8.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.8A 1.5 V VCB=750V; IE=0 10 μA VCB=1500V; IE=0 1.0 mA ICBO 7 UNIT V Collector cut-off current hFE-1 DC current gain IC=0.5A ; VCE=5V 5 hFE-2 DC current gain IC=3A ; VCE=10V 4 fT Transition frequency IC=0.5A ; VCE=10V;f=0.5MHz VF Diode forward voltage IC=3.5A 25 2 MHz 2.0 V Switching times resistive load ts Storage time 1.5 μs 0.2 μs IC=3A; IB1=0.8A; IB2=-1.6A VCC=200V tf Fall time 2 Inchange Semiconductor Product Specification 2SD1846 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3