SAVANTIC 2SD437

SavantIC Semiconductor
Product Specification
2SD437
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage
·Fast switching speed
APPLICATIONS
·For switching regulator and power
amplifier applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
600
V
VCEO
Collector-emitter voltage
Open base
350
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
PT
Total power dissipation
80
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
SavantIC Semiconductor
Product Specification
2SD437
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
350
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
6
V
VCEsat-1
Collector-emitter saturation voltage
IC=5 A;IB=1 A
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=8 A;IB=2.5 A
3.0
V
VBEsat-1
Base-emitter saturation voltage
IC=5 A;IB=1 A
1.4
V
VBEsat-2
Base-emitter saturation voltage
IC=8 A;IB=2.5 A
1.8
V
ICBO
Collector cut-off current
VCB=600V;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
15
hFE-2
DC current gain
IC=6A ; VCE=5V
10
2
MIN
TYP.
MAX
50
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD437