SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION ·With TO-220 package ·Complement to type 2SA968 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SC2238 VCBO VCEO Collector-base voltage Collector-emitter voltage 2SC2238A Open emitter Emitter-base voltage 180 2SC2238B 200 2SC2238 160 2SC2238A UNIT 160 Open base 2SC2238B VEBO VALUE 180 V V 200 Open collector 5 V IC Collector current 1.5 A IE Emitter current -1.5 A PT Total power dissipation 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC2238 V(BR)CEO Collector-emitter breakdown voltage 2SC2238A TYP. MAX UNIT 160 IC=10mA; IB=0 V 180 200 2SC2238B V(BR)EBO MIN Emitter-base breakdown voltage IE=1mA; IC=0 Collector-emitter saturation voltage IC=500A; IB=50mA 1.5 V VBE Base-emitter on voltage IC=500mA ; VCE=5V 1.0 V ICBO Collector cut-off current VCB=160V ;IE=0 1.0 µA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 µA hFE DC current gain IC=100mA ; VCE=5V Cob Output capacitance IE=0 ; VCB=10V,f=1MHz 25 pF fT Transition frequency IC=100mA ; VCE=10V 100 MHz VCEsat hFE Classifications O Y 70-140 120-240 2 5 V 70 240 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3