SAVANTIC 2SD792

SavantIC Semiconductor
Product Specification
2SD792
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage
·Wide area of safe operation
APPLICATIONS
·For line-operated horizontal deflection
output applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
4
V
IC
Collector current
5
A
ICM
Collector current-peak
7
A
PT
Total power dissipation
35
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=90
SavantIC Semiconductor
Product Specification
2SD792
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
V(BR)EBO
Collector-emitter sustaining voltage
IC=0.1A; IB=0;L=25mH
700
V
Emitter-base breakdown votage
IE=10mA; IC=0
4
V
VCEsat
Collector-emitter saturation voltage
IC=4.5 A;IB=2 A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=4.5 A;IB=2 A
1.5
V
VCB=750V;IE=0
50
µA
VCB=1500V;IE=0
1.0
mA
0.1
mA
ICBO
MAX
UNIT
Collector cut-off current
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE
DC current gain
IC=4A ; VCE=10V
tf
TYP.
4
12
Fall time
0.7
µs
IC=4A; IBend=1.8A; LB=10µH
tstg
13
Storage time
2
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD792