SavantIC Semiconductor Product Specification 2SD1168 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A ICM Collector current-peak 10 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification 2SD1168 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCER(SUS) Collector-emitter sustaining voltage IC=5A; RBE=109;L=2mH V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=2 A;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=2 A;IB=1A 1.5 V VCB=750V; IE=0 0.1 ICBO CONDITIONS MIN TYP. V 5 V Collector cut-off current tf DC current gain UNIT 800 mA VCB=1500V; IE=0 hFE MAX IC=1A ; VCE=4V 1.0 9 25 Fall time 0.5 µs IC=1.5 A; IB1=0.2A; IB2=-0.7A ts Storage time 2 hFE Classifications Q P 9-18 15-25 2 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD1168