SAVANTIC BU133

SavantIC Semiconductor
Product Specification
BU133
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Intended for operating in color TV
receiver’s chopper supplies
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
750
V
VCEO
Collector-emitter voltage
Open base
250
V
VEBO
Emitter-base voltage
Open collector
7
V
3
A
30
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
TC=50
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance from junction to mounting base
VALUE
2.33
UNIT
/W
SavantIC Semiconductor
Product Specification
BU133
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
250
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.5A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.5A
1.4
V
ICBO
Collector cut-off current
VCB=750V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=5V
Transition frequency
IC=0.2A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
15
MAX
UNIT
80
8
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BU133