SEMIHOW HSB100-8

Preliminary
= 600 V
IT(RMS) = 0.8A
Silicon Controlled Rectifier
3.Anode
Symbol
FEATURES
2.Gate
‰
‰
‰
‰
Repetitive Peak Off-State Voltage: 600V
R.M.S On-state Current (IT(RMS)=0.8A)
Average On-state Current (IT(AV)=0.5A)
Low On-State Voltage (1.2VTyp@ITM)
1.Cathode
1. K
2. G
3. A
3
General Description
2
1
HSB100-8
PNPN Devices designed for high volume, line-powered consumer
applications such as relay and lamp driver, small motor controls, gate
drivers for larger thyristors and sensing and detection circuits. Supplied
in and inexpensive plastic TO-92 package which is readily adaptable for
use in automatic insertion equipment.
Absolute Maximum Ratings
Symbol
(Ta=25℃)
Parameter
Value
Units
VDRM
Repetitive Peak Off-State Voltage
600
V
IT(RMS)
R.M.S On-State Current (All conduction angles)
0.8
A
IT(AV)
Average On-State Current
(Half Sine Wave : TC=74℃)
0.5
A
ITSM
Surge On-State Current
(1/2 Cycle, 60Hz, Peak, Non Repetitive)
10
A
I2t
Circuit Fusing Considerations (t=8.3mS)
0.415
A2s
Forward Peak Gate Power Dissipation (Ta=25℃)
0.1
W
PG(AV)
Forward Average Gate Power Dissipation
(Ta=25℃, t=8.3mS)
0.01
W
VRGM
Reverse Peak Gate Voltage
5
V
IFGM
Forward Peak Gate Current
1
A
TSTG
Storage Temperature Range
-40 to +125
℃
Operating Junction Temperature
-40 to +125
℃
PGM
Tj
◎ SEMIHOW REV.1.0 Jan 2007
HSB100-8
VDRM
HSB100-8
Preliminary
Symbol
(Ta=25℃)
Parameter
Test Conditions
(1)
Min
Max
Units
VAK=7V, RL=100Ω
200
uA
0.8
1.2
V
V
IGT
Gate Trigger Current
VGT
Gate Trigger Voltage(1)
VAK=7V, RL=100Ω, Ta=25℃
VAK=7V, RL=100Ω, Ta=-40℃
VGD
Non Trigger Gate Voltage
VAK=12V(DC), RL=100Ω, TC=125℃
Holding Current
VAK=12V, Gate open,
Initiating current=50mA, Ta=25℃
Ta=-40℃
IDRM
Repetitive Peak Off-State
Current
VAK=VDRM or VRRM, TC=25℃
VAK=VDRM or VRRM, TC=125℃
VTM
Peak On-State Voltage(2)
ITM=1A, Peak
IH
(1)
RGK Current is not included in measurement
(2)
Forward current applied for 1ms maximum duration, duty cycle ≤ 1%
Typ
0.2
V
2
2
5
10
mA
mA
10
200
uA
uA
1.2
1.7
V
Typ
Max
Units
1.3
℃/W
Thermal Characteristics
Symbol
Parameter
Test Conditions
RTH(J-C)
Thermal Resistance
Junction to Case
RTH(J-A)
Thermal Resistance
Junction to Ambient
Min
60
℃/W
Performance Curves
Fig 1. HSB100-8 Current Derating
(Reference : Case Temperature)
Tc, Max allowable Case
Temperature (℃)
100
90
DC
70
60˚
90˚
120˚
180˚
50
0
0.1
0.2
0.3
0.4
IT(AV) Average On-State Current (A)
a
a=Conduction Angle
Case Measurement
Point
Center of Flat portion
a=30˚
120
a
0.5
Ta, Max allowable Ambient
Temperature (℃)
a=Conduction Angle
110
Fig 2. HSB100-8 Current Derating
(Reference : Ambient Temperature)
Typical Printed
Circuit Board
Mounting
80
DC
60
40
a=30˚
60˚
20
0
0.1
0.2
90˚
120˚
0.3
180˚
0.4
IT(AV) Average On-State Current (A)
◎ SEMIHOW REV.1.0 Jan 2007
HSB100-8
Electrical Characteristics
Preliminary
HSB100-8
Package Dimensions
HSB100-8
(TO-92)
Dimension Table
Ref
Dimension (mm)
Min
Max
A
4.43
4.83
B
4.43
4.83
C
3.46
3.96
C1
0.92
1.12
L
13.97
14.97
a
0.36
0.56
c
2.54(Typ)
◎ SEMIHOW REV.1.0 Jan 2007
Preliminary
HSB100-8
Taping Dimensions
项目
F1、F2
说 明
标准值
左右脚的中心线到中间脚的中心线的距离
2.5 +0.2, -0.1
F
左右脚的中心线之间的距离
5.0 +0.6, -0.2
P
相邻两只管的中间脚之间的距离
12.7±0.5
P1
孔中心到右脚的垂直距离
3.85±0.5
P2
孔中心到中间脚的垂直距离
6.35±0.5
H0
孔中心到成形处的垂直距离
16.0±0.5
H
孔中心到塑封体下缘的垂直距离
19.5±1
H1
孔中心到塑封体上缘的垂直距离
Max27
W0
热熔胶带宽度
6.0±0.5
W1
孔中心到线带上缘的距离
9.0±0.5
W
线带宽度
W2
热熔胶带和线带的高度之差
D0
孔径
18.0+1.0, -0.5
Max1.0
4.0±0.2
◎ SEMIHOW REV.1.0 Jan 2007