HUASHAN HCR1C60

Shantou Huashan Electronic Devices Co.,Ltd.
HCR1C60
Silicon Controlled Rectifier
█　Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(IT(RMS)=1A)
* Low On-State Voltage (1.2V(Typ.)@ ITM)
█　General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
█ Absolute Maximum Ratings（Ta=25℃　ｕｎｌｅｓｓ　ｏｔｈｅｒｗｉｓｅ　ｓｐｅｃｉｆｉｅｄ）　T s t g ——Storage Temperature ------------------------------------------------------ －40~150℃
T j ——Operating Junction Temperature --------------------------------------------------- 125℃　VDRM ——Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V
IT（RMS）——R.M.S On-State Current（180ºConduction Angles）------------------------------------------1.0A
IT(AV) ——Average On-State Current (Half Sine Wave : TC = 45 °C) ------------------------------------------0.8A
ITSM ——Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) ------------------------2
I t ——Circuit Fusing Considerations(t = 8.3ms) ----------------------------------------------------------PGM ——Forward Peak Gate Power Dissipation (Ta=25℃）　-------------------------------------------------
10A
0.9A2 s
0.5W
PG(AV) ——Forward Average Gate Power Dissipation (Ta=25℃，ｔ＝８．３ｍｓ）　---------------------------------0.1W
IFGM ——Forward Peak Gate Current ------------------------------------------------------------------------------ 0.2A
VRGM ——Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V
Shantou Huashan Electronic Devices Co.,Ltd.
HCR1C60
█ Electrical Characteristics （Ta=25℃　ｕｎｌｅｓｓ　ｏｔｈｅｒｗｉｓｅ　ｓｐｅｃｉｆｉｅｄ）
Symbol
IDRM
Items
Min.
Typ.
Repetitive Peak Off-State
Current
VTM
Peak On-State Voltage (1)
IGT
Gate Trigger Current（2）
Max.
Unit
VAK =VDRM
1.2
10
200
1.7
uA
Ta=25℃　Ta=125℃
V
ITM=1A,PEAK
uA
VAK =6V(DC), RL =100 ohm
Ta=25℃　Ta= -40℃
200
500
VG T
Gate Trigger Voltage (2)
V
IH
Non-Trigger Gate Voltage
V
0.2
VAK =12V, RL =100 ohm
Ta=125℃
IT=100mA,Gate open,
mA Ta=25℃　Ta= -40℃
Holding Current
2.0
VAK =6V(DC), RL =100 ohm
Ta=25℃　Ta= -40℃
0.8
1.2
VGD
Conditions
5.0
10
Rth(j-c)
Thermal Resistance
50
℃/W
Junction to Case
Rth(j-a)
Thermal Resistance
160
℃/W
Junction to Ambient
V/µs
VD=VDRM67% exponential
Waveform Rjk=1Kohm Tj=125℃
dv/dt
Critical Rate of Rise Off-state
Voltage
200
1. Forward current applied for 1 ms maximum duration,duty cycle ≤1%.
2. RGK current is not included in measurement.
█　Performance Curves
FIGURE 2 –Maximum CaseTemperture
Gate Voltage (v)
Max. Allowable Case Temperture (°c)
FIGURE 1 – Gate Characteristics
Gate Current (mA)
Average On-State Current (mA)
Shantou Huashan Electronic Devices Co.,Ltd.
HCR1C60
FIGURE 4-Thermal Response
On-State Current(A)
Transient Thermal Imperdance (°c)
FIGURE 3-Typical Forward Voltage(V)
On-State Voltage (V)
Time (sec)
FIGURE 5-Typical Gate Trigger Voltage VS
FIGURE 6-Typical Gate Trigger Current VS
Junction Temperature
Junction Temperature
Junction Temperature (°C)
Junction Temperature (°C)
Junction Temperature (°C)
Dissipation (W)
FIGURE 8-Power Dissipation
Max. Average Power
Holding Current (mA)
FIGURE 7-Typical Holding Current
Average On-State Current (A)