MMBD193 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Marking Code: 5D SOT-23 Plastic Package Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Average Forward Current IO 100 mA Maximum Peak Forward Current IFM 300 mA Surge Current (10 ms) IFSM 2 A Power Dissipation Ptot 150 mW Junction Temperature Tj 150 O Storage Temperature Range Ts - 55 to + 150 O Symbol Max. Unit VF 1.2 V IR 0.5 µA CT 3 pF trr 4 ns C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Total Capacitance at VR = 0 , f = 1 MHz Reverse Recovery Time at IF = 10 mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008 MMBD193 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008