MPSA63 / 64 PNP Silicon Epitaxial Planar Transistor Darlington Transistor for high gain amplification 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCES 30 V Emitter Base Voltage -VEBO 10 V Collector Current -IC 500 mA Total Power Dissipation Ptot 625 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 10 mA at -VCE = 5 V, -IC = 100 mA Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 10 V Collector Emitter Breakdown Voltage at -IC = 100 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 100 µA Base Emitter On Voltage at -VCE = 5 V, -IC = 100 mA Transition Frequency at -VCE = 5 V, IE = 10 mA MPSA63 MPSA64 MPSA63 MPSA64 Symbol Min. Max. Unit hFE hFE hFE hFE 5000 10000 10000 20000 - - -ICBO - 100 nA -IEBO - 100 nA -V(BR)CES 30 - V -VCE(sat) - 1.5 V VBE(on) - 2 V fT 125 - MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/08/2007 MPSA63 / 64 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/08/2007