ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 4 V Collector Current IC 20 mA Base Current IB 4 mA Ptot 100 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O Power Dissipation C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC1923 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit DC Current Gain at VCE=6V, IC=1mA Current Gain Group R O hFE 40 - 80 - hFE 70 - 140 - Y hFE 100 - 200 - ICBO - - 0.5 μA IEBO - - 0.5 μA Cre - 0.70 - pF fT - 550 - MHz Cr.rbb’ - - 30 ps NF - 2.5 4 dB Gpe 15 18 - dB Collector Cutoff Current at VCB=18V Emitter Cutoff Current at VEB=4V Reverse Transfer Capacitance at VCE=6V, f=1MHz Gain Bandwidth Product at VCE=6V, IC=1mA Collector-Base Time Constant at VCE=6V, IE=-1mA, f=30MHz Noise Figure at VCE=6V, IE=-1mA, f=100MHz Power Gain at VCE=6V, IE=-1mA, f=100MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC1923 0.01 F 6pF DUT 15pF 1000pF 0.01 F OUTPUT 50 L1 1000pF 0.02 F 1K 2.2K INPUT 50 -VE (I E =-1mA) 0.02 F VCC L1:0.8mmφ SILVER PLATED COPPER WIRE, 4T,10ID,8 LENGTH Fig. 1 NF, Gpe TEST CIRCUIT PARAMETER(Typ.) (1) COMMON EMITTER (VCE=6V,IE=-1mA, f=100MHz) CHARACTERISTIC SYMBOL TYP. UNIT Input Conductance gie 2.9 mS Input Capacitance Cie 10.2 pF Reverse Transfer Admittance IyreI 0.33 μS Phase Angle of Reverse Transfer Admittance -Υre 90 o Forward Transfer Admittance IyfeI 40 mS Phase Angle of Forward Transfer Admittance -Υfe 20 o Output Conductance goe 45 μS Output Capacitance Coe 1.1 pF SYMBOL TYP. UNIT Input Conductance gib 34 mS Input Capacitance -Cib 10 pF Reverse Transfer Admittance IyrbI 0.27 μS Phase Angle of Reverse Transfer Admittance -Υrb 105 o Forward Transfer Admittance IyfbI 34 mS Phase Angle of Forward Transfer Admittance Υfb 165 o Output Conductance gob 45 μS Output Capacitance Cob 1.1 pF (2) COMMON BASE(VCE=6V,IE=-1mA,f=100MHz) CHARACTERISTIC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC1923 h FE -I C VCE=6V 300 20 COMMON EMITTER VCE=6V o Ta=25 C 500 450 400 350 300 250 200 16 12 DC CURRENT h FE COLLECTOR CURRENT I C (mA) STATIC CHARACTERISTICS 150 8 100 4 I B =50 A 100 50 30 0 200 400 BASE CURRENT I B ( A) 0 0.2 0.4 0.6 VCE=6V 0.8 30 20 10 COLLECTOR EMITTER VOLTAGE VCE (V) 10 BASE EMITTER VOLTAGE VBE (V) 600 0.3 0.1 COMMON EMITTER Ta=25 o C 0.5 1 3 10 5 20 COLLECTOR CURRENT I C (mA) Cie ,g ie -I E INPUT CAPACITANCE C ie (pF) INPUT CONDUCTANCE g ie (mS) 30 Cie 10 g ie 5 3 COMMON EMITTER VCE=6V f=100MHz Ta=25 o C 1 -0.2 -0.3 -0.5 -1 -5 -3 -10 EMITTER CURRENT I E (mA) 5 3 1 300 COMMON EMITTER VCE=6V f=100MHz Ta=25 o C g oe 100 50 30 Coe -300 -100 REVERSE TRANSFER ADMITTANCE IYreI (mS) 10 IY re I, PHASE ANGLE OF REVERSE TRANSFER ADMITTANCE re ( o) OUTPUT CAPACITANCE C oe (pF) 30 OUTPUT CONDUCTANCE g oe ( S) Coe,g oe-I E re -I E 3 COMMON EMITTER VCE=6V f=100MHz Ta=25 o C 1 0.5 IY re I 0.3 0.1 re 10 -50 -0.2 -0.5 -1 -3 -5 0.05 -10 -0.2 -0.3 EMITTER CURRENT I E (mA) -0.5 -1 -3 -5 -10 EMITTER CURRENT I E (mA) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC1923 -30 -10 -5 Cib ,g ib -I E 100 -100 100 IY feI 50 fe 30 10 COMMON EMITTER VCE=6V f=100MHz Ta=25 o C 5 -0.2 -0.3 -0.5 -1 -3 -5 INPUT CONDUCTANCE g ib (mS) -50 fe-I E INPUT CAPACITANCE C ib (pF) PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE fe ( o) -100 FORWARD TRANSFER ADMITTANCE IYfeI (mS) IY feI, -50 -30 -10 -5 g ib 50 30 Cib 10 COMMON BASE VCB=6V f=100MHz Ta=25 o C 5 -10 -0.2 -0.3 EMITTER CURRENT I E (mA) -0.5 -1 -5 -3 -10 EMITTER CURRENT I E (mA) Cob,g ob-I E 5 3 1 FORWARD TRANSFER ADMITTANCE IYfbI (mS) 10 COMMON BASE VCB=6V f=100MHz Ta=25oC 1000 g ob PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE fb ( o) OUTPUT CONDUCTANCE g ob ( S) OUTPUT CAPACITANCE C ob (pF) IY fbI, 200 20 100 50 30 Cob 10 500 300 100 50 -0.2 -0.3 -0.5 -1 -3 -5 -10 100 IY fbI 50 30 fb 10 COMMON BASE VCB=6V f=100MHz Ta=25 o C 5 -0.2 -0.3 EMITTER CURRENT I E (mA) -500 -300 -100 -1 -3 -5 Cie ,g ie -VCE fb-I E 1 20 0.5 0.3 IY rb I rb 0.1 COMMON BASE VCB=6V f=100MHz Ta=25 o C 0.05 -50 -0.5 EMITTER CURRENT I E (mA) INPUT CAPACITANCE C ie (pF) INPUT CONDUCTANCE g ie (mS) -1000 REVERSE TRANSFER ADMITTANCE IYrb I (mS) PHASE ANGLE OF REVERSE TRANSFER ADMITTANCE rb ( o ) IY rb I, fb-I E -0.2 -0.3 -0.5 -1 -3 -5 Cie 10 COMMON EMITTER I E =-1mA f=100MHz Ta=25 o C 5 g ie 3 1 -10 EMITTER CURRENT I E (mA) 1 3 5 10 30 COLLECTOR-EMITTER VOLTAGE V CE (V) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 -10 ST 2SC1923 IY feI , 3 1 0.5 COMMON EMITTER I E =-1mA f=100MHz Ta=25 oC 50 PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE fe ( o) 5 OUTPUT CONDUCTANCE g oe ( S) OUTPUT CAPACITANCE C oe (pF) -100 100 10 g oe 30 b oe 10 -50 -30 -10 -5 FORWARD TRANSFER ADMITTANCE IYfeI (mS) Coe,g oe-VCE 100 IY feI 30 fe 10 5 1 3 10 5 50 100 IY re I 0.3 re 0.1 0.05 5 3 1 10 INPUT CONDUCTANCE g ib (mS) COMMON EMITTER I E=-1mA f=100MHz Ta=25 oC 0.5 -50 -30 -10 g ib 30 Cib 10 -5 5 IY fbI, 1 100 50 g ob 30 Cob 300 10 100 1 3 5 10 30 COLLECTOR-BASE VOLTAGE V CB (V) FORWARD TRANSFER ADMITTANCE IYfbI (mS) COMMON BASE I E =-1mA f=100MHz Ta=25 oC PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE fb ( o) 3 10 30 COLLECTOR-BASE VOLTAGE V CB (V) 300 OUTPUT CONDUCTANCE g ob ( S) OUTPUT CAPACITANCE C ob (pF) 5 5 3 1 30 Cob,g ob-VCB 10 30 COMMON EMITTER I E =-1mA f=100MHz Ta=25 oC 50 COLLECTOR-EMITTER VOLTAGE V CE (V) 30 10 Cib ,g ib -VCB re -VCE -100 1 5 COLLECTOR-EMITTER VOLTAGE V CE (V) INPUT CAPACITANCE C ib (pF) 100 REVERSE TRANSFER ADMITTANCE IYre I (mS) PHASE ANGLE OF REVERSE TRANSFER ADMITTANCE re ( o) IY reI, 3 30 COLLECTOR-EMITTER VOLTAGE V CE (V) 300 COMMON EMITTER I E =-1mA f=100MHz Ta=25 oC 50 5 1 fe-VCE fb-VCB 300 COMMON BASE I E=-1mA f=100MHz o Ta=25 C 100 50 IY fbI 30 fb 10 1 3 5 10 30 COLLECTOR-BASE VOLTAGE V CB (V) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC1923 1 -300 -100 -50 Yie -f rb -VCB 20 COMMON BASE I E =-1mA f=100MHz Ta=25 oC 0.5 INPUT SUSCEPTANCE b ie (mS) REVERSE TRANSFER ADMITTANCE IY rb I (mS) PHASE ANGLE OF REVERSE TRANSFER ADMITTANCE rb ( o ) IY rbI , IY rb I 0.3 rb 0.1 f=200MHz 16 150 12 100 8 4 27 10.7 0.05 5 3 1 10 0 30 5 0 COLLECTOR-BASE VOLTAGE VCB (V) 0 10 30 20 40 50 1200 100 800 50 27 f=10.7MHz 27 50 COMMON EMITTER VCE=6V I E =-1mA Ta=25 o C f=200MHz FORWARD TRANSFER SUSCEPTANCE bfe (mS) OUTPUT SUSCEPTANCE boe ( S) 30 25 0 150 400 20 Yfe-f FORWARD TRANSFER CONDUCTANCE g fe (mS) COMMON EMITTER VCE=6V I E =-1mA Ta=25 o C 1600 15 10 INPUT CONDUCTANCE g ie (mS) Yoe-f 2000 COMMON EMITTER VCE=6V I E =-1mA Ta=25 o C 50 -10 100 150 -20 200 -30 10.7 0 0 20 -40 60 40 80 100 120 OUTPUT CONDUCTANCE g oe ( S) Yre -f REVERSE TRANSFER CONDUCTANCE g re ( S) -120 -80 -40 f=10.7MHz COMMON EMITTER VCE=6V I E =-1mA Ta=25 o C P C-Ta 0 120 0 27 50 -200 100 -400 150 -600 200 -800 COLLECTOR POWER DISSIPATION Pc (mW) -160 REVERSE TRANSFER SUSCEPTANCE bre ( S) -200 100 80 60 40 20 0 0 20 40 60 80 100 120 140 o AMBIENT TEMPERATURE Ta ( C) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002