ST 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner. The transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features 1) High gain bandwidth product 2) Small output capacitance 3) Low noise figure TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 4 V Collector Current IC 20 mA Base Current IB 20 mA Ptot 250 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Power Dissipation C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/05/2003 ST 2SC2786 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group M hFE 40 - 80 - L hFE 60 - 120 - K hFE 90 - 180 - ICBO - - 0.1 μA IEBO - - 0.1 μA VBE - 0.72 - V VCE(sat) - 0.1 0.3 V fT 400 600 - MHz Gpe 18 22 - dB CC․rb’b - 12 15 Ps COB - 1 1.3 pF NF - 3.0 5 dB DC Current Gain at VCE=6V, IC=1mA Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=4V Base Emitter Voltage at VCE=6V, IC=1mA Collector Saturation Voltage at IC=10mA, IB=1mA Gain Bandwidth Product at VCE=6V, IE=-1mA Power Gain at VCE=6V, IE=-1mA at f=100MHz, RG=50Ω Collector Base Time Constant at VCE=6V, IE=-1mA, f=31.9MHz Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=-1mA at f=100MHz, RG=50Ω SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/05/2003 ST 2SC2786 Total power dissipation vs. ambient temperature 300 Total power dissipation, mW Collector current vs. base emitter voltage Collector current vs. collector emitter voltage In free air 50 10 20 250 80 8 5 60 6 I C, mA 150 10 70 Ic (mA) 200 VCE=6V 50 40 4 100 2 2 30 1 20 0.5 50 I B=10 A 0 0 25 50 75 125 100 8 4 150 0.2 12 20 16 0.1 0 VCE (V) Ambient temperature ( C) 0.2 0.4 0.6 0.8 1 1.2 VBE ,V DC current gain vs. collector emitter voltage DC CURRENT GAIN vs. COLLECTOR CURRENT Gain bandwidth product vs. emitter current IC=1mA VCE= 6V VCE= 6V hFE 100 fT, MHz 200 200 100 50 50 500 20 20 200 10 0.1 0.2 0.5 1 2 5 100 10 10 20 1 I C, mA 2 5 10 20 -10 -20 -100 Cob, pF Cib, pF VCE(sat) 3 2 Collector base time constant vs. emitter current 100 f=1MHz VBE (sat) 0.1 -1 I E, mA Imput capacitance vs. emitter base voltage Output capacitance vs. collector base voltage I C/I B =10 1 -0.1 50 VCE, V Base collector saturation volage vs. collector current VBE(sat) , V VCE(sat), V 1000 Cc rb'b, ps h FE - DC Current Gain 500 Cib(Ic=0) Cob(I E =0) 1 0.5 VCB= 6V f=31.9MHz 10 0.2 0.01 0.1 1 10 20 I C, mA 0.1 1 10 VCB, V VEB, V 100 1 -0.1 -0.3 -1 -3 -10 -20 I E, mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/05/2003 ST 2SC2786 Forward transfer amittance vs. collector current Reverse transfer admittance vs. collector current 500 -gre 0 -bre 10.7MHz gre, m S b re , m S g fe, m S b fe, m S 100 g fe 100MHz 10.7MHz -gre 10 0.2 V CE =6V input short 0.3 1 0.2 -bre 0.5 -b fe 10.7MHz gie 100 MHz 0.01 0.1 10 20 1 1 10 0.1 1 10 20 I C, mA I C, mA I C, mA Reverse transfer amittance vs. collector current Input amittance vs. collector current Output amittance vs. collector current 1 V CB =6V input short -b rb 100MHz 1 V CB =6V output short 500 0.5 g oe 100MHz -b rb 10.7MHz 0.05 -b ib 10.7MHz g oe, m S b oe, m S g ib 100MHz 100 g ib , m S b ib , m S 0.1 -b ib 100MHz 10 0.1 1 10 g oe 10.7MHz 0.2 b oe 10.7MHz 0.1 0.05 -g rb 100MHz 0.02 V CE =6V input short b oe 100MHz 0.5 g ib 10.7MHz -g rb 10.7MHz 0.2 0.02 0.01 1 100 0.2 1 10 20 0.1 1 10 100 I C, mA I C, mA I C, mA Reverse transfer amittance vs. frequency Input amittance vs. frequency Forward transfer amittance vs. collector current V CE =6V I C =1mA input short V CE =6V I C =1mA input short 10 0.5 5 0.2 -b re 0.1 -g re 0.05 g ie , m S b ie , m S 1 -g fb 100MHz -g fb 10.7MHz 100 2 b ie g ie 1 b fb b fb 10.7MHz 10 100MHz 0.5 0.02 V CB =6V output short 500 g fb, m S b fb, m S g rb , m S b rb , m S gie 1 0.1 bie 0.4 g re , m S b re , m S 100 MHz bie 10.7MHz 10 0.01 V CE =6V output short 100 MHz 10.7MHz 0.1 -b fe 100MHz g fe Input admittance vs. collector current 100 g ie , m S b ie , m S V CE =6V output short 0.2 10 20 50 100 f , MHz 200 10 20 50 100 200 f , MHz 1 0.2 1 10 20 I C, mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/05/2003 ST 2SC2786 Forward transfer amittance vs. frequency Power gain, noise figure vs. emitter current Output amittance vs. frequency VCE=6V I C=1mA output short 25 VCE=6V I C=1mA input short 20 Gpe VCE=6V f=100MHz test circuit 2 g fe 20 10 b fe 5 0.5 0.2 g oe 0.1 0.02 10 20 50 100 f, MHz 200 12 10 8 5 0.05 2 15 4 NF 0 10 20 50 100 200 f, MHz -0.1 -1 -10 I E, mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 17/05/2003 0 NF, dB 50 Gpe, dB 1 g oe, m S b oe, m S g fe, m S b fe, m S 100 b oe