ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage VRM 45 V Average Rectified Output Current IO 50 mA Peak Forward Current IFM 150 mA Surge Forward Current Isurge 500 mA Junction Temperature Tj 75 O Storage Temperature Range TS -55 to +175 O C C Characteristics at Ta = 25oC Forward Current at VF = 1V Reverse Currents at VR = 10V Junction Capacitance C at f = 1MHz, V = 1V Rectification Efficiency at Vi = 2Vrms, = 5KΩ Symbol Min. Typ. Max. Unit IF 4 - - mA IR - - 50 μA - - - 1 pF η 55 - - % 5KΩ 20PF Output Input 2Vrms Rectification Efficiency Measurement Circuit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/02/2003