Datasheet

UNISONIC TECHNOLOGIES CO., LTD
1N60P
Power MOSFET
1.2A, 600V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 1N60P is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and a high rugged
avalanche characteristic. This power MOSFET is usually used at
high speed switching applications of power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
„
FEATURES
* RDS(ON) [email protected] = 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„
„
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
1N60PL-T92-B
1N60PG-T92-B
TO-92
1N60PL-T92-K
1N60PG-T92-K
TO-92
1N60PL-T92-R
1N60PG-T92-R
TO-92
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape Box
Bulk
Tape Reel
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QW-R502-634.A
1N60P
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
1.2
A
Continuous Drain Current
ID
1.2
A
Pulsed Drain Current (Note 2)
IDM
4.8
A
Single Pulsed (Note 3)
EAS
50
mJ
Avalanche Energy
4.0
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (TA=25℃)
PD
1
W
Junction Temperature
TJ
+150
℃
℃
Operating Temperature
TOPR
-55 ~ +150
Storage Temperature
TSTG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
„
THERMAL DATA
PARAMETER
Junction to Ambient
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
RATINGS
140
UNIT
℃/W
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QW-R502-634.A
1N60P
„
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
VGS=0V, ID=250μA
VDS=600V, VGS=0V
VGS=30V, VDS=0V
IGSS
VGS=-30V, VDS=0V
△BVDSS/△TJ ID=250μA
Forward
Reverse
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=0.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD=300V, ID=1.2A, RG=50Ω
Turn-On Rise Time
tR
(Note 2, 3)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=480V, VGS=10V, ID=1.2A
Gate-Source Charge
QGS
(Note 2, 3)
Gate-Drain Charge
QGD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS =1.2A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS=0V, IS=1.2A
dIF/dt=100A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
Gate-Source Leakage Current
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
600
V
10 μA
100 nA
-100 nA
0.4
V/℃
2.0
4.0
9.3 11.5
V
Ω
120 150
20
25
3.0 4.0
pF
pF
pF
5
25
7
25
5.0
1.0
2.6
20
60
25
60
6.0
ns
ns
ns
ns
nC
nC
nC
1.4
V
1.2
A
4.8
A
160
0.3
ns
μC
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QW-R502-634.A
1N60P
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VDD
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
P.W.
Period
D=
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-634.A
1N60P
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Gate Charge Test Circuit
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Switching Waveforms
Gate Charge Waveform
Unclamped Inductive Switching Waveforms
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1N60P
Drain Current, ID (µA)
Drain Current, ID (A)
Drain Current, ID (mA)
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
„
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-634.A
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