1N60P, 1N60S POINT CONTACT GERMANIUM DIODES 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Peak Reverse Voltage VRM 45 V Reverse Voltage dc VR 20 V Peak Forward Current IFM 150 mA Average Rectified Output Current IO 50 mA Surge Forward Current Isurge 500 mA Junction Temperature Tj 75 O Storage Temperature Range TS -55 to +175 O C C Characteristics (1N 60 P) Symbol Test condition(Ta25±2oC) Min. Typ. Max. Unit IF VF = 1V 4 - - mA 1N 60P IR VR = 10V - - 50 uA 1N 60S IR VR = 10V - - 100 uA Junction Capacitance C - f = 1MHz, V = -1V - - 1 pF Rectification efficiency n Vi = 2Vrms, R = 5KΩ C = 20PF, f = 40MHz 55 - - % Forward Current Reverse Current Pair △IF<6mA at 1V, △IR<20uA at 10V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 26/09/2003 1N60P, 1N60S 20PF ~ ~ ~ 5K output Input 2Vrms Rectification Efficiency Measurement Circuit Forward Characteristics mA 30 IF 15 0 0.2 1.6 V V Reverse Characteristics uA 200 IR 100 0 25 50 V VR SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 26/09/2003