CAT.No.TJ 536 USKB SERIES UL File No. E142422 Summary Bridge diodes are being required to take up less space accompanying the reduced size of electronic equipment. In order to respond to these needs, Shindengen has developed a new package in offering a complete lineup of bridge diodes that can be used in a wide range of power supply environments. Features Rectified forward current : 4A（US4KB80R）, 6A（US6KB80R）, 8A（US8KB80R）, （with heat sink） 10A（US10KB80R）, 15A（US15KB80R）, 30A（US30KB80R） ● Large current capacity of 30A with compact package ● High I FSM and High Voltage ● UL approved Bridge Rectifier Diodes, registered in file number E142422 ● High-density mounting for improved space efficiency through the use of SIP （Single In-Line Package） ● Application TV, Monitor, Switching power supply, PC, Audio, Printer CAT.No.TJ 536 RATINGS Absolute Maximum Ratings（Tc=25℃／Unless otherwise specified） ● Item Storage Temperature Operation Junction Temperature Maximun Reverse Voltage US4KB80R US6KB80R US8KB80R Unit Tstg −55∼150 ℃ Tj 150 ℃ VRM 800 Symbol Conditions With heatsink Average Rectified Forward Current Io Without heatsink IFSM 60Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ IFSM1 Non−repetitive, Tj=25℃ Peak Surge Forward Current Current Squared Time 60Hz sine wave, Resistance load I2t Tj=25℃, Per diode Dielectric Strength Vdis Mounting Torque TOR （Recommended torque：0.5N・m） ● 6 8 （Tc=125℃） （Tc=116℃） （Tc=108℃） 2.1 2.1 2.2 （Ta=30℃） （Ta=30℃） （Ta=26℃） 150 175 200 245 470 575 （tp=3ms） （tp=1ms） （tp=1ms） 93 112 166 A A （3ms≦t＜8.3ms） （1ms≦t＜8.3ms） （1ms≦t＜8.3ms） A2 s 2.0 kV 0.8 N・m Terminals to cace, AC 1 minute Electrical Characteristics（Tc=25℃／Unless otherwise specified） MAX. 1.00 Forward Voltage VF Pulse measurement, Per diode Reverse Current IR VR=800V, Pulse measurement, Per diode Thermal Resistance （IF=2A） MAX. 1.00 （IF=3A） MAX. 1.00 （IF=4A） MAX. 10 MAX. 3.5 MAX. 3.0 θjc Junction to case, With heatsink θjl Junction to lead, Without heatsink MAX. θja Junction to ambient, Without heatsink MAX. 35 Type No. ● V 4 US4K80R μA MAX. 2.8 ℃/W 5 US6K80R V US8K80R Absolute Maximum Ratings（Tc=25℃／Unless otherwise specified） Item Storage Temperature Operation Junction Temperature Maximun Reverse Voltage Symbol Conditions −55∼150 ℃ Tj 150 ℃ 800 VRM Io IFSM Peak Surge Forward Current IFSM1 Current Squared Time Unit Tstg With heatsink Average Rectified Forward Current US10KB80R US15KB80R US30KB80R I2 t 60Hz sine wave, Resistance load Without heatsink V 10 15 30 （Tc=100℃） （Tc=101℃） （Tc=97℃） 2 2 2.1 （Ta=28℃） （Ta=30℃） （Ta=27℃） 60Hz sine wave, Non−repetitive 1cycle peak value, Tj=25℃ 150 200 350 Non-repetitive, Tj=25℃ 245 330 1000 （tp=3ms） （tp=3ms） （tp=1ms） 93 166 510 Tj=25℃, Per diode Dielectric Strength Vdis Mounting Torque TOR （Recommended torque：0.5N・m） （3ms≦t＜8.3ms） （3ms≦t＜8.3ms） （1ms≦t＜8.3ms） Terminals to cace, AC 1 minute A A A2s 2.0 kV 0.8 N・m Electrical Characteristics（Tc=25℃／Unless otherwise specified） ● Forward Voltage VF Pulse measurement, Per diode Reverse Current IR VR=800V, Pulse measurement, Per diode Thermal Resistance Type No. MAX. 1.10 （IF=5A） MAX. 1.10 （IF=7.5A） MAX. 1.10 （IF=15A） MAX. 10 MAX. 2.5 MAX. 1.5 θjc Junction to case, With heatsink θjl Junction to lead, Without heatsink MAX. θja Junction to ambient, Without heatsink MAX. 35 U10K80R μA MAX. 0.8 ℃/W 5 U15K80R V U30K80R CAT.No.TJ 536 CHARACTERISTIC DIAGRAMS US4KB80R Forward Power Dissipation Tc=150℃［TYP］ Tc= 25℃［TYP］ 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 T 6 4 2 1 Average Rectified Forward Current Io［A］ Average Rectified Forward Current Io［A］ on glass−epoxy substrate P.C.B SIN soldering land 3mm φ 2 1.5 1 0.5 0 0 20 40 60 80 100 120 3 4 100 50 0 1 5 140 7 6 2 4 Tc 2 1 Ambient Temperature Ta［℃］ 60 80 100 120 20 50 100 Peak Surge Forward Current Capability 3 40 10 500 Tc−sensing point SIN 20 5 Number of Cycles ［cycle］ 5 0 0 160 heatsink Sine wave R-load With heatsink 8.3ms 1cycle non−repetitive sine wave Tj=25℃ Derating Curve Tc-Io Derating Curve Ta-Io 3 2.5 2 8.3ms 150 Average Rectified Forward Current Io［A］ Forward Voltage VF［V］ Sine wave R-load Free in air SIN Tj=150℃ 0 0 1.6 D=tp/T 140 I tp）FSM （ 5 Io tp 8 Peak Surge Forward Current I FSM1［A］ Forward Current IF［A］ 10 Peak Surge Forward Current I FSM［A］ Pulse measurement per diode Forward Power Dissipation PF［W］ 20 Peak Surge Forward Current Capability 200 10 IFSM Forward Voltage 30 400 300 tp 200 Tj=150℃ 100 90 80 70 60 50 3 160 non−repetitive sine wave Tj=25℃ 4 Case Temperature Tc［℃］ 5 6 7 8.3 Pulse Wide tp［ms］ US6KB80R Forward Power Dissipation Pulse measurement per diode Tc=150℃［TYP］ 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 T 10 Tj=150℃ 6 4 2 1 Average Rectified Forward Current Io［A］ Sine wave R-load Free in air P.C.B SIN soldering land 3mm φ 2 1.5 1 0.5 0 0 20 40 60 80 100 120 Ambient Temperature Ta［℃］ 3 4 5 6 7 8.3ms 150 100 50 0 1 8 140 160 10 heatsink Sine wave R-load With heatsink Tc SIN 2 20 40 60 80 100 120 Case Temperature Tc［℃］ 5 10 20 50 100 Peak Surge Forward Current Capability 4 0 0 2 Number of Cycles ［cycle］ 1000 Tc−sensing point 8 6 8.3ms 1cycle non−repetitive sine wave Tj=25℃ Derating Curve Tc-Io on glass−epoxy substrate Average Rectified Forward Current Io［A］ Derating Curve Ta-Io 2.5 2 200 Average Rectified Forward Current Io［A］ Forward Voltage VF［V］ 3 SIN D=tp/T 8 0 0 1.6 tp 140 160 I tp）FSM （ 5 Tc= 25℃［TYP］ Io 12 Peak Surge Forward Current I FSM1［A］ Forward Current IF［A］ 10 Peak Surge Forward Current I FSM［A］ Forward Power Dissipation PF［W］ 20 Peak Surge Forward Current Capability 250 14 IFSM Forward Voltage 30 500 tp non−repetitive sine wave Tj=25℃ 200 Tj=150℃ 100 50 1 2 3 4 Pulse Wide tp［ms］ 5 6 7 8.3 CAT.No.TJ 536 CHARACTERISTIC DIAGRAMS US8KB80R Forward Voltage Forward Power Dissipation Tc= 25℃［TYP］ 5 2 1 0.2 0.4 0.6 0.8 1 1.2 1.4 T Tj=150℃ 10 5 2 Average Rectified Forward Current Io［A］ Average Rectified Forward Current Io［A］ 2.5 on glass−epoxy substrate P.C.B SIN soldering land 3mm φ 2 1.5 1 0.5 0 0 20 40 60 80 100 120 6 8 8.3ms 150 100 50 0 1 10 2 140 heatsink Sine wave R-load With heatsink 12 10 20 50 100 Peak Surge Forward Current Capability Tc−sensing point Tc 10 SIN 6 4 2 0 0 160 5 Number of Cycles ［cycle］ 1000 14 8 8.3ms 1cycle non−repetitive sine wave Tj=25℃ 200 Derating Curve Tc-Io Derating Curve Ta-Io Sine wave R-load Free in air 4 250 Average Rectified Forward Current Io［A］ Forward Voltage VF［V］ 3 SIN 15 0 0 1.6 D=tp/T 20 40 Ambient Temperature Ta［℃］ 60 80 100 120 140 I tp）FSM （ 0.2 Io tp Peak Surge Forward Current I FSM1［A］ Forward Current IF［A］ Tc=150℃［TYP］ 300 Peak Surge Forward Current I FSM［A］ Forward Power Dissipation PF［W］ Pulse measurement per diode 20 0.1 0 Peak Surge Forward Current Capability 20 IFSM 50 500 Tj=25℃ Tj=150℃ 200 100 50 1 160 tp non−repetitive sine wave 2 Case Temperature Tc［℃］ 3 4 5 6 7 8.3 Pulse Wide tp［ms］ US10KB80R 30 Tc= 25℃［TYP］ 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 tp T 20 15 10 5 2 P.C.B SIN soldering land 3mm φ 2 1.5 1 0.5 0 0 20 40 60 80 100 120 6 8 10 IFSM 50 0 1 12 140 Ambient Temperature Ta［℃］ 160 16 heatsink Sine wave R-load With heatsink 14 Tc SIN 6 4 2 20 40 60 80 100 120 Case Temperature Tc［℃］ 5 10 20 50 100 Peak Surge Forward Current Capability 8 0 0 2 Number of Cycles ［cycle］ 500 Tc−sensing point 12 10 8.3ms 1cycle non−repetitive sine wave Tj=25℃ 100 Derating Curve Tc-Io on glass−epoxy substrate Average Rectified Forward Current Io［A］ Average Rectified Forward Current Io［A］ Derating Curve Ta-Io 3 2.5 4 8.3ms 150 Average Rectified Forward Current Io［A］ Forward Voltage VF［V］ Sine wave R-load Free in air SIN Tj=150℃ 0 0 1.6 D=tp/T 140 160 I tp）FSM （ Tc=150℃［TYP］ Io 25 Peak Surge Forward Current I FSM1［A］ Forward Current IF［A］ 10 200 Peak Surge Forward Current I FSM［A］ Forward Power Dissipation PF［W］ Pulse measurement per diode 20 5 Peak Surge Forward Current Capability Forward Power Dissipation Forward Voltage 50 400 300 tp Tj=25℃ non−repetitive sine wave 200 Tj=150℃ 100 90 80 70 60 50 3 4 5 6 Pulse Wide tp［ms］ 7 8.3 CAT.No.TJ 536 CHARACTERISTIC DIAGRAMS US15KB80R Forward Voltage Forward Power Dissipation 5 2 1 0.5 0.2 0.2 0.4 0.6 0.8 1 1.2 1.4 tp T 30 Tj=150℃ 25 20 15 10 5 0 0 1.6 5 Average Rectified Forward Current Io［A］ Average Rectified Forward Current Io［A］ 2.5 on glass−epoxy substrate P.C.B SIN soldering land 3mm φ 2 1.5 1 0.5 0 0 20 40 60 80 100 120 15 IFSM 8.3ms 150 100 50 0 1 20 140 24 20 16 2 Tc Tc 4 Ambient Temperature Ta［℃］ 60 80 100 120 20 50 100 Peak Surge Forward Current Capability 8 40 10 1000 SIN 20 5 Number of Cycles ［cycle］ Tc−sensing point 12 0 0 160 heatsink Sine wave R-load With heatsink 8.3ms 1cycle non−repetitive sine wave Tj=25℃ Derating Curve Tc-Io Derating Curve Ta-Io Sine wave R-load Free in air 10 200 Average Rectified Forward Current Io［A］ Forward Voltage VF［V］ 3 SIN D=tp/T 140 I tp）FSM （ 0.1 0 Io 35 Peak Surge Forward Current I FSM1［A］ Forward Current IF［A］ Tc=150℃［TYP］ Tc= 25℃［TYP］ 250 Peak Surge Forward Current I FSM［A］ Forward Power Dissipation PF［W］ Pulse measurement per diode 20 10 Peak Surge Forward Current Capability 40 50 500 200 non−repetitive sine wave Tj=150℃ 100 50 20 3 160 tp Tj=25℃ 4 Case Temperature Tc［℃］ 5 6 7 8.3 Pulse Wide tp［ms］ US30KB80R Forward Power Dissipation 10 5 2 1 0.5 0.2 0.2 0.4 0.6 0.8 1 1.2 1.4 tp T Tj=150℃ 50 40 30 20 10 0 0 1.6 5 on glass−epoxy substrate P.C.B SIN soldering land 3mm φ 2 1.5 1 0.5 0 0 20 40 60 80 100 120 15 20 25 30 35 8.3ms 300 200 100 0 1 40 140 Ambient Temperature Ta［℃］ 160 50 heatsink Sine wave R-load With heatsink Tc SIN 10 20 40 60 80 100 120 Case Temperature Tc［℃］ 5 10 20 50 100 Peak Surge Forward Current Capability 20 0 0 2 Number of Cycles ［cycle］ 2000 Tc−sensing point 40 30 8.3ms 1cycle non−repetitive sine wave Tj=25℃ Derating Curve Tc-Io Average Rectified Forward Current Io［A］ Average Rectified Forward Current Io［A］ Derating Curve Ta-Io 3 2.5 10 400 Average Rectified Forward Current Io［A］ Forward Voltage VF［V］ Sine wave R-load Free in air SIN D=tp/T 60 140 160 I tp）FSM （ 0.1 0 Peak Surge Forward Current I FSM［A］ Tc=150℃［TYP］ Tc= 25℃［TYP］ Io 70 Peak Surge Forward Current I FSM1［A］ 20 Pulse measurement per diode Forward Power Dissipation PF［W］ Forward Current IF［A］ 50 Peak Surge Forward Current Capability 500 80 IFSM Forward Voltage 100 1000 tp Tj=25℃ 500 non−repetitive sine wave Tj=150℃ 200 100 1 2 3 4 5 Pulse Wide tp［ms］ 6 7 8.3 CAT.No.TJ 536 OUTLINE DIMENSIONS ＋ 22.1 −0.3 C3 3.45 ＋−0.2 2− ＋ 0.15 US4K 80R ＋ 18.5 −0.3 ＋ 10 −0.15 Type No. R1.8 9771 3.6 −0.2 0.1 ＋ Date code Control No. ＋ ＋ 2.5−0.2 ＋ − 0.2 2.2 1 ＋ 18.6 −0.8 2− ＋ 0.3 2.05−0.2 Polarity ＋ 1.1 −0.1 ＋ ＋ 2 3 4 0.1 0.5 −0.05 ＋ ＋ 5.08 −0.3 5.08 −0.3 5.08 −0.3 1 2 3 4 Unit： ■The level of quality of our products is intended for use in standard applications.（OA and other office equipment, communication equipment, measuring instruments, home appliances, industrial equipment, etc.）In the case these products are to be used in equipment or devices in which failure or malfunction of a product may directly affect human life or health（Nuclear power control equipment, aerospace equipment, devices and systems for preserving life, transportation equipment, traffic control equipment, safety control devices, fire prevention/anti-theft equipment, combustion control equipment, etc.）, always make sure to contact us in advance. ■All specifications are subject to change without notice. ■Please contact us for the latest specifications before you order. ■Please use our products after confirming the details in the specifications and the application manuals. U.S.A Shindengen America, Inc. Head Office 161 Plaza La Vista Road, Camarillo, CA 93010 U.S.A. Phone:+1-805-445-8420 Fax:+1-805-445-8421 Chicago Office 2333 Waukegan Road, Suite 170 Bannockburn, IL. 60015 U.S.A. Phone:+1-847-444-1363 Fax:+1-847-444-0654 Europe Shindengen UK Ltd. Head Office Howard Court, 12 Tewin Road, Welwyn Garden City, Hertfordshire. AL7 1BW U.K. Phone:+44-1707-332992 Fax:+44-1707-332955 German Branch Kapell Strasse 6, D-40479, Dusseldorf, Germany Phone:+49-211-4919680 Fax:+49-211-4986499 Asia Shindengen Singapore PTE Ltd. 750D, Chai Chee Road, #05-01, Technopark@Chai Chee, Singapore 469004 Phone:+65-6445-0082 Fax:+65-6445-6089 Shindengen（H.K.）Co., Ltd. Head Office Suite 3206, 32/F, Tower 1, The Gateway, 25 Canton Road, TST, Kowloon, Hong Kong. Phone:+852-2317-1884 Fax:+852-2314-8561 Taipei Branch Room N1010, 10F, Chia-Hsin Bldg. 2 No. 96, Sec. 2, Chung Shan N. RD. Taipei, Taiwan R.O.C. Phone:+886-2-2560-3990 Fax:+886-2-2560-3991 Shanghai Liaison Office W504 Sun Plaza, No.88 Xian xia Road, Shanghai, 200336, China Phone:+86-21-6270-1173 Fax:+86-21-6270-0419 Shindengen Electric Mfg. Co., Ltd. Head Office New-Ohtemachi Bldg., 2-1 Ohtemachi 2-chome, Chiyoda-ku, Tokyo 100-0004, Japan Phone : +81-3-3279-4545, 4546, 4547 Fax : +81-3-3279-4519 Seoul Office Korea City Air-Terminal Bldg. 606, 159-6, Samsung-Dong, Kangnam-ku, Seoul, Korea Phone:+82-2-551-1431 Fax:+82-2-551-1432 ELECTRIC MFG. CO., LTD. 【 URL 】http://www.shindengen.co.jp 07600（NQ）