IRF830
Features
■
Extremely high dv/dt capability
■
Low Gate Charge Qg results in
VDSS = 500V
Simple Drive Requirement
ID = 5A
■
100% avalanche tested
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing repeatability
RDS(ON) = 1.2Ω
Description
The IRF830 is a new generation of high voltage
N–Channel enhancement mode power MOSFETs and
is obtained through an extreme optimization layout design,
in additional to pushing on-resistance significantly down,
special care is taken to ensure a very good dv/dt capability,
provide superior switching performance, withstand high
IRF830 TOP View (TO220)
energy pulse in the avalanche, and increases packing density.
Application
■
High current, high speed switching
■
Lighting
■
Ideal for off-line power supply, adaptor, PFC
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25 ْC
Continuous Drain Current,VGS@10V
5
ID@Tc=100ْC
Continuous Drain Current,VGS@10V
3
IDM
Pulsed Drain Current
20
PD@TC=25ْC
Power Dissipation
①
Units
A
80
W
Linear Derating Factor
0.67
W/ ْC
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy
120
mJ
IAR
Avalanche Current
5
A
EAR
Repetitive Avalanche Energy
8.5
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
–55 to +150
ْC
②
①
①
③
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
—
1.56
RθCS
Case-to-Sink,Flat,Greased Surface
—
0.50
—
RθJA
Junction-to-Ambient
—
—
62.5
Units
ْC/W
1
IRF830
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
Min.
Typ.
Max. Units
500
—
—
V
Test Conditions
VGS=0V,ID=250μA
△V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient
—
0.6
—
RDS(on)
Static Drain-to-Source On-resistance
—
1.15
1.2
Ω VGS=10V,ID=2.5A
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS=VGS,ID=250μA
gfs
Forward Transconductance
—
4.3
—
S
VDS=40V,ID=2.25A
IDSS
Drain-to-Source Leakage current
—
—
1
—
—
10
Gate-to-Source Forward leakage
—
—
100
Gate-to-Source Reverse leakage
—
—
-100
Qg
Total Gate Charge
—
11
15
Qgs
Gate-to-Source charge
—
3
—
Qgd
Gate-to-Drain("Miller") charge
—
5
—
td(on)
Turn-on Delay Time
—
13
36
tr
Rise Time
—
22
54
td(off)
Turn-Off Delay Time
—
28
66
tf
Fall Time
—
20
50
Ciss
Input Capacitance
—
515
670
Coss
Output Capacitance
—
55
72
Crss
Reverse Transfer Capacitance
—
6.5
8.5
IGSS
V/ْC Reference to 25ْC,ID=250μA
μA
nA
④
VDS=500V,VGS=0V
VDS=400V,VGS=0V,TJ=150ْC
VGS=30V
VGS=-30V
ID=5A
nC VDS=400V
VGS=10V
VDD=250V
ID=5A
nS
RG=25Ω
VGS=0V
pF VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
.
ISM
Pulsed Source Current
(Body Diode) ①
.
VSD
Min.
Typ.
Max.
—
—
5
Units
Test Conditions
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
—
—
20
Diode Forward Voltage
—
—
1.4
V
TJ=25ْC,IS=5A,VGS=0V ④
Trr
Reverse Recovery Time
—
300
—
nS
Qrr
Reverse Recovery Charge
—
1.8
TJ=25ْC,IF=5A
di/dt=100A/μs ④
Notes:
① Repetitive rating; pulse width limited by
maxIimum. junction temperature
② L = 15mH, IAS =4 A, VDD = 50V,
uC
③ ISD≤5A,di/dt≤200A/μs, VDD≤V(BR)DSS,
TJ≤25 ْC
④ Pulse width≤300μS; duty cycle≤2%
RG = 25Ω, Starting TJ = 25°C
2
IRF830
Typical Performance Characteristics
Figure 1 On-Region Characteristics
Figure 3 On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 5 Capacitance Characteristics
Figure 2 Transfer Characteristics
Figure 4 Body diode forward Voltage
Variation vs. Source Current and
temperature
Figure 6 Gate Charge Characteristics
3
IRF830
Typical Performance Characteristics
Figure 7 Breakdown Voltage Variation
vs. Temperature
Figure 8 On-Resistance Variation vs.
Temperature
Figure 9 Maximum Safe Operation
Area
Figure 10 Maximum Drain Current vs.
Case Temperature
Figure 12 Transient Thermal Response Curve
4
IRF830
Test Circuit and Waveform
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
Unclamped Inductive Switching Test Circuit & Waveform
5
IRF830
Mechanical Dimensions
TO-220
6