SSBR20100CT SSBR20100CTF Main Product Characteristics: IF 2×10A VRRM 100V Tj(max) 150C Vf(max) 0.8V Features and Benefits: High Junction Temperature High ESD Protection, IEC Model ±10Kv High Forward & Reverse Surge capability Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability TO220 SSBR20100CT TO220F SSBR20100CTF Absolute Rating: Symbol VRRM VR(RMS) Characterizes Value Unit Peak Repetitive Reverse Voltage 100 V RMS Reverse Voltage 70 V Per diode 10 A Per device 20 A IF(AV) Average Forward Current IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) 180 A IRRM Peak Repetitive Reverse Surge Current(Tp=2us) 0.5 A TJ Maximum operation Junction Temperature Range -50~150 ℃ Tstg Storage Temperature Range -50~150 ℃ Value Unit TO220 2 ℃/W TO220F 4 ℃/W Thermal Resistance Symbol RθJC RθJC Characterizes Maximum Thermal Resistance Junction To Case Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes VR Reverse Breakdown Voltage VF Forward Voltage Drop IR Leakage Current ©Silikron Semiconductor CO.,LTD. Min Typ Max 100 V 0.8 0.75 0.1 5 2009.5.15 www.silikron.com Unit V mA Version : 1.0 Test Condition IR=0.5mA IF=10A, TJ=25℃ IF=10A, TJ=125℃ VR=100V, TJ=25℃ VR=100V, TJ=125℃ page 1of3 SSBR20100CT SSBR20100CTF I-V Curves； Figure 1：Typical Forward Characteristics Figure 2：Typical Reverse Characteristics ©Silikron Semiconductor CO.,LTD. 2009.5.15 www.silikron.com Version : 1.0 page 2of3 SSBR20100CT SSBR20100CTF Mechanical Data： TO220 TO220F： ©Silikron Semiconductor CO.,LTD. 2009.5.15 www.silikron.com Version : 1.0 page 3of3