SILIKRON SSF2701

SSF2701
GENERAL FEATURES
N-Channel
●
VDS = 20V,ID = 2.4A
RDS(ON) < 125mΩ @ VGS=4.5V
RDS(ON) < 200mΩ @ VGS=2.5V
Schematic diagram
P-Channel
●
P-channel
N-channel
VDS = -20V,ID = -2.8A
RDS(ON) < 100mΩ @ VGS=-4.5V
RDS(ON) < 150mΩ @ VGS=-2.5V
Pin Assignment
●High Power and current handing capability
●Lead free product is acquired
●Surface Mount Package
TSOP-6
top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2701
SSF2701
TSOP-6
-
-
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
20
-20
V
Gate-Source Voltage
VGS
±12
±12
V
2.4
-2.8
1.7
-2
8
-10
1.15
1.15
0.6
0.6
-55 To 150
-55 To 150
N-Ch
87
P-Ch
87
Continuous Drain Current
TA=25℃
ID
TA=70℃
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
IDM
TA=25℃
PD
TA=70℃
Operating Junction and Storage Temperature Range
TJ,TSTG
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note2)
©Silikron Semiconductor CO.,LTD.
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℃/W
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SSF2701
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
VGS=0V ID=250μA
N-Ch
20
VGS=0V ID=-250μA
P-Ch
-20
VDS=20V,VGS=0V
N-Ch
1
VDS=-20V,VGS=0V
P-Ch
-1
N-Ch
±100
P-Ch
±100
VGS=±12V,VDS=0V
V
μA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
N-Ch
0.6
1
VDS=VGS,ID=-250μA
P-Ch
-0.5
-1
VGS=4.5V, ID=2.4A
N-Ch
100
125
VGS=-4.5V, ID=-2.8A
P-Ch
80
100
VGS=2.5V, ID=1.8A
N-Ch
160
200
VGS=-2.5V, ID=-2A
P-Ch
110
150
VDS=5V,ID=2.4A
N-Ch
5
VDS=-5V,ID=-2.8A
P-Ch
9
N-Ch
10
P-Ch
12
N-Ch
28
P-Ch
35
N-Ch
16
P-Ch
19
N-Ch
8
P-Ch
22
N-Ch
3.8
P-Ch
8
N-Ch
0.9
P-Ch
1.1
N-Ch
0.8
P-Ch
2.6
VGS=0V,IS=1A
N-Ch
0.8
1.1
V
VGS=0V,IS=-1A
P-Ch
-0.8
-1.1
V
V
mΩ
S
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
N-Ch
VDD=10V, RL=10Ω
VGEN=4.5V,RGEN=6Ω
P-Ch
VDD=-10V, RL=10Ω
VGEN=-4.5V,RGEN=6Ω
N-Ch
VDS=10V,ID=2.4A,
VGS=4.5V
P-Ch
VDS=-10V,ID=-2.8A,
VGS=-4.5V
nS
nS
nS
nS
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
©Silikron Semiconductor CO.,LTD.
VSD
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v1.0
SSF2701
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
r(t),Normalized Effective
Transient Thermal Impedance
N-Channel THERMAL CHARACTERISTICS
Square Wave Pluse Duration(sec)
Figure 1: Normalized Maximum Transient Thermal Impedance
r(t),Normalized Effective
Transient Thermal Impedance
P-Channel THERMAL CHARACTERISTICS
Square Wave Pluse Duration(sec)
Figure 2: Normalized Maximum Transient Thermal Impedance
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SSF2701
TSOP-6 PACKAGE INFORMATION
SYMBOL
A
Millimeters
MIN
MAX
0.90
1.10
A1
0.10
b
0.30
0.50
c
0.08
0.20
D
2.70
3.10
E
2.60
3.00
E1
1.40
1.80
e
L
0.95 BSC
0.35
0.55
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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SSF2701
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron
representative nearest you before using any Silikron products described or contained herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
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Any and all information described or contained herein are subject to change without notice due to
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that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
©Silikron Semiconductor CO.,LTD.
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