SS22-SS215 SCHOTTKY BARRIER RECTIFIERS PRODUCT SUMMARY 2.0 AMPS Surface Mount SMB/DO-214AA FEATURES .083(2.10) .077(1.95) For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: o 260 C / 10 seconds at terminals .147(3.73) .137(3.48) .187(4.75) .167(4.25) .012(.31) .006(.15) .103(2.61) .078(1.99) .012(.31) .006(.15) .056(1.41) .035(0.90) .008(.20) .004(.10) .209(5.30) .201(5.10) MECANICAL DATA Dimensions in inches and (millimeters) Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481 Weight: 0.093gram Pb-free; RoHS-compliant MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL(See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) IF= 2.0A @ 25oC @ 100oC o Maximum DC Reverse Current @ TA =25 C at o Rated DC Blocking Voltage @ TA=125 C Typical Junction Capacitance (Note 3) Typical Thermal Resistance ( Note 2 ) Operating Temperature Range Storage Temperature Range Notes: 04/05/2007 Rev.1.00 Symbol SS 22 20 VRRM 14 VRMS 20 VDC SS 23 30 21 30 SS 24 40 28 40 SS 25 50 35 50 SS 26 60 42 60 SS 29 90 63 90 SS 210 100 70 100 SS Units 215 150 V 105 V 150 V I(AV) 2.0 A IFSM 50 A VF IR 0.5 0.4 0.70 0.65 0.4 10 Cj R θJL R θJA TJ 0.85 0.95 0.70 0.80 0.1 5.0 130 17 75 -65 to +125 -65 to +150 -65 to +150 TSTG 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.4” x 0.4”(10mm x 10mm) Copper Pad Areas. 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. www.SiliconStandard.com V mA mA pF o C/W o C C o 1 SS22-SS215 RATINGS AND CHARACTERISTIC CURVES (SS22 THRU SS215) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT RESISTIVE OR INDUCTIVE LOAD 1.5 SS25-SS215 SS22-SS24 1.0 0.5 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 2.0 50 8.3ms Single Half Sine Wave JEDEC Method AT RATED TL 40 30 20 10 0 0 1 10 NUMBER OF CYCLES AT 60Hz O LEAD TEMPERATURE. ( C) 100 FIG.4-TYPICALREVERSE CHARACTERISTICS FIG.3- TYPICAL FORWARD CHARACTERISTICS 100 SS22-SS24 SS25-SS215 50 O TJ=25 C INSTANTANEOUS REVERSE CURRENT. (mA) INSTANTANEOUS FORWARD CURRENT. (A) O SS25-SS26 10 SS22-SS24 1 SS29-SS210 0.1 SS215 PULSE WIDTH=300 S 1% DUTY CYCLE 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ=125 C 10 1 O TJ=75 C 0.1 0.01 O TJ=25 C 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 1.6 FORWARD VOLTAGE. (V) FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS FIG.5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE.(pF) O Tj=25 C f=1.0MHz Vsig=50mVp-p 100 10 0.1 SS29-SS215 SS22-SS24 SS25-SS26 1 10 100 TRANSIENT THERMAL IMPEDANCE. (OC/W) 100 400 10 1 0.1 0.01 REVERSE VOLTAGE. (V) 0.1 1 T, PULSE DURATION. (sec) 10 100 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly orVby implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 04/05/2007 Rev.1.00 www.SiliconStandard.com 2