SDR3KHF & SDR3KHFSMS thru SDR3NHF & SDR3NHFSMS Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 3 AMP 800 - 1200 V 35 nsec Hyper Fast Rectifier Features: • Hyper Fast Recovery: 35 nsec maximum • PIV to 1200 Volts • Hermetically Sealed • Void Free Construction • For High Efficiency Applications SMS Axial Lead Diode • Single Chip Construction • Low Reverse Leakage • TX, TXV, S Level screening Available Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR3KHF SDR3MHF SDR3NHF Average Rectified Forward Current (Resistive Load, 60 hz Sine Wave, TA = 25 °C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Maximum Thermal Resistance Junction to Leads, L = 3/8 Junction to Tabs NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. Symbol Value Units VRRM VRSM VR 800 1000 1200 Volts Io 3.0 Amps IFSM 70 Amps TOP & TSTG -65 to +175 ºC R?JE 20 14 ºC/W DATA SHEET #: RC0097A DOC SDR3DHF & SDR3DHFSMS thru SDR3NHF & SDR3NHFSMS Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic Instantaneous Forward Voltage Drop (TA = 25ºC, pulsed) Instantaneous Forward Voltage Drop (TA = -55ºC, pulsed) Reverse Leakage Current (Rated VR, TA = 25ºC, pulsed) Reverse Leakage Current (Rated VR, TA = 100ºC, pulsed) Reverse Recovery Time (IF = 500mA, IR = 1A, IRR = 250mA, TA = 25ºC) Junction Capacitance (VR = 10VDC, f = 1MHz, TA = 25ºC) Case Outline: (Axial) Case Outline: (SMS) Symbol Max Units VDC SDR3KHF – SDR3NHF 3A 1A VF1 VF2 3.1 1.9 SDR3KHF – SDR3NHF 1A VF3 2.0 VDC IR1 10 µA IR2 300 µA tRR 35 nsec CJ 30 pF DIM A B C D MIN –– –– 0.047” 0.950” MAX 0.165” 0.220” 0.053” –– DIM A B C D MIN 0.172” 0.180” 0.022” 0.002” MAX 0.180” 0.280” 0.028” --