High Voltage Fast-Switching NPN Power Transistor BUL128 ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION INTERNAL SCHEMATIC DIAGR ■ APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. 4 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 TO-220 ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-Emitter Voltage (V BE = 0) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 4 A Collector Peak Current (t p < 5 ms) 8 A IC I CM IB Parameter Base Current 2 A I BM Base Peak Current (t p < 5 ms) 4 A P tot Total Dissipation at T c = 25 o C 70 T stg Tj Storage Temperature Max. Operating Junction Temperature W -65 to 150 o C 150 o C 1/5 BUL128 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.78 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = -1.5 V) V CE = 700 V V CE = 700 V V EBO Emitter-Base Voltage (I C = 0) I E = 10 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I CEO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ I C = 100 mA Collector Cut-Off Current (I B = 0) V CE = 400 V Collector-Emitter Saturation Voltage IC IC IC IC = = = = 0.5 A 1A 2.5 A 4A Min. Typ. T j = 125 o C L = 25 mH IB IB IB IB = = = = I C = 0.5 A IC = 1 A I C = 2.5 A I B = 0.1 A I B = 0.2 A I B = 0.5 A DC Current Gain I C = 10 mA IC = 2 A Group A Group B V CE = 5 V V CE = 5 V RESISTIVE LOAD Storage Time Fall Time V CC = 125 V I B1 = 0.4 A T p = 30 µs IC = 2 A I B2 = -0.4 A (see fig.2) ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE(off) = -5 V V clamp = 200 V I B1 = 0.4 A R BB = 0 Ω (see fig.1) µA µA V 400 V 250 µA 0.7 1 1.5 V V V V 1.1 1.2 1.3 V V V 0.5 10 14 25 ts tf Unit 100 500 9 0.1 A 0.2 A 0.5 A 1A Base-Emitter Saturation Voltage Max. 28 40 0.2 3 0.4 µs µs 0.6 0.1 1 0.2 µs µs 1.5 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/5 BUL128 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/5 BUL128 Inductive Load Fall Time Inductive Load Storage Time Resistive Load Fall Time Resistive Load Storage Time Reverse Biased SOA 4/5 BUL128 Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/5