TC2996B REV1_20070503 1.9 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES PHOTO ENLARGEMENT • 12 W Typical Power at 1.9 GHz • 13 dB Typical Linear Power Gain at 1.9 GHz • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • Suitable for High Reliability Application • Lg = 1 µm, Wg = 30 mm • 100 % DC and RF Tested • Flange Ceramic Package DESCRIPTION The TC2996B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial applications. ELECTRICAL SPECIFICATIONS (@ 1.9 GHz) SYMBOL CONDITIONS P1dB Output Power at 1dB Gain Compression Point VDS = 10 V, IDS = 2.5A GL Linear Power Gain VDS = 10 V, IDS = 2.5A MIN TYP 39.5 41.0 dBm 12 13 dB rd MAX UNIT IP3 Intercept Point of the 3 -order Intermodulation, VDS = 10 V, IDS = 2.5A, *PSCL = 28 dBm 50 dBm PAE Power Added Efficiency at 1dB Compression Power 40 % IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V gm Transconductance at VDS = 2 V, VGS = 0 V VP Pinch-off Voltage at VDS = 2 V, ID = 60 mA BVDGO Rth Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 7.5 A 5400 mS -1.7 Volts 22 Volts 1.5 °C/W * PSCL: Output Power of Single Carrier Level. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/3 TC2996B REV1_20070503 ABSOLUTE MAXIMUM RATINGS at 25 °C Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature HANDLING PRECAUTIONS: Rating 12 V -5 V IDSS 35dBm 60 W 175 °C - 65 °C to +175 °C The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. FLANGE PACKAGE OUTLINE (in mm) Gate Source Source Drain TYPICAL COMMON SOURCE SCATTERING PARAMETERS (VD = 10 V, ID = 2.5 A) FREQUENCY (GHz) 1 2 3 4 5 6 S11 MAG 0.98594 0.93861 0.99773 0.99921 0.99931 0.99920 ANG 174.59 172.82 165.13 158.57 151.93 144.83 S21 MAG 0.99195 0.89877 0.09707 0.02972 0.01351 0.00762 S12 ANG 49.618 -68.601 -125.68 -135.99 -141.86 -146.81 MAG 0.006454 0.010435 0.001768 0.000940 0.000717 0.000618 S22 ANG -28.741 -127.32 -156.24 -144.13 -137.94 -136.73 MAG 0.71594 0.98480 0.94714 0.96184 0.97169 0.97762 ANG -163.61 -172.81 179.61 175.04 170.70 166.59 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/3 TC2996B REV1_20070503 EVALUATION BOARD PCB Material: FR4 -Vg +10 V Co6 ER = 4.6 Co5 Co4 Thickness = 31 mil Ci4 Unit: mil Co3 Co2 Ci2 Ci3 Co1 30mm FET @1.9GHz Evaluation PCB Part Type Resistor Reference Designator R1 Description 12 ohm 0603 Manufacturer Capacitor Ci1 1.0 pF 0603 Murata Capacitor Ci2 1.0 pF 0603 Murata Capacitor Ci3 1.2 pF 0603 Murata Capacitor Ci4 1000 pF 0603 Murata Capacitor Ci5 10 uF 1206 Murata Capacitor Co1 2.2 pF 0603 Murata Capacitor Co2 1.0 pF 0603 Murata Capacitor Co3 1.5 pF 0603 Murata Capacitor Co4 1000 pF 0603 Murata Capacitor Co5 0.1 uF 0603 Murata Capacitor Co6 10 uF 1206 Murata TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P3/3