TC2997B REV0_20040412 1.9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs FEATURES PHOTO ENLARGEMENT • 20W Typical Power at 1.9 GHz • 12 dB Typical Linear Power Gain at 1.9 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • Suitable for High Reliability Application • Lg = 1 µm, Wg = 50 mm • 100 % DC and RF Tested • Flange Ceramic Package DESCRIPTION The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercials applications. ELECTRICAL SPECIFICATIONS ( @ 1.9 GHz ) Symbol P1dB CONDITIONS MIN TYP MAX UNIT Output Power at 1dB Gain Compression Point VDS = 10.5 V, IDS = 5A 42 43 11 12 dB 52 dBm dBm GL Linear Power Gain VDS = 10.5 V, IDS = 5A IP3 Intercept Point of the 3rd-order Intermodulation VDS = 10.5 V, IDS = 5A, *PSCL = 32 dBm PAE Power Added Efficiency at 1dB Compression Power 40 % IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 12.5 A gm Transconductance at VDS = 2 V, VGS = 0 V 9000 mS VP Pinch-off Voltage at VDS = 2 V, ID = 60 mA -1.7 Volts 22 Volts 0.9 °C/W BVDGO Rth Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 * PSCL: Output Power of Single Carrier Level. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/3 TC2997B REV0_20040412 ABSOLUTE MAXIMUM RATINGS at 25 °C Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature HANDLING PRECAUTIONS: Rating 12 V -5 V IDSS 37 dBm 100 W 175 °C - 65 °C to +175 °C The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. FLANGE PACKAGE OUTLINE (in mm) Gate Source Source Drain TYPICAL COMMON SOURCE SCATTERING PARAMETERS (VD = 10.5 V, ID = 5 A) FREQUENCY (GHz) 1 2 3 4 5 6 S11 MAG 0.98447 0.89499 0.99590 0.99889 0.99929 0.99934 ANG 175.60 175.92 170.70 165.88 161.45 157.00 S21 MAG 0.89405 1.01350 0.12798 0.04273 0.02065 0.01208 S12 ANG 58.716 -35.168 -99.501 -109.58 -115.98 -121.61 MAG 0.004436 0.011258 0.002725 0.001526 0.001113 0.000908 S22 ANG -11.953 -80.437 -127.56 -127.53 -127.40 -128.39 MAG 0.83047 0.96855 0.98934 0.98926 0.99039 0.99112 ANG -171.23 -173.25 176.29 171.49 167.26 163.24 EVALUATION BOARD TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/3 TC2997B REV0_20040412 PCB Material: FR4 ER = 4.6 Thickness = 31 mil Unit: mil TC2997B Part Type Resistor Resistor Reference Designator R1 R2 Description 10 ohm 0603 0 ohm 0603 Manufacturer Capacitor Ci1 1.2 pF 0603 Murata Capacitor Capacitor Ci2 Ci3 1.0 pF 0603 1.5 pF 0603 Murata Murata Capacitor Ci4 1000 pF 0603 Murata Capacitor Ci5 10 uF 1206 Murata Capacitor Co1 2.2 pF 1212 Temex Capacitor Co2 1.5 pF 1212 Temex Capacitor Co3 1000 pF 0603 Murata Capacitor Co4 0.1 uF 0603 Murata Capacitor Co5 10 uF 1206 Murata TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P3/3