TRANSCOM TC1102 January 2002 Super Low Noise GaAs FETs FEATURES • • • • • PHOTO ENLARGEMENT Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested DESCRIPTION The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain. The device can be used in circuits up to 40 GHz and suitable for low noise application including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga IDSS gm VP BVDGO Rth MIN CONDITIONS Noise Figure at VDS = 2 V, IDS = 10 mA,, f = 12GHz Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA Drain-Gate Breakdown Voltage at IDGO =0.08 mA Thermal Resistance 11 5 TYP 0.5 13 40 55 -1.0 8 90 MAX 0.7 UNIT dB dB mA mS Volts Volts °C/W TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 9 TC1102 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS IGS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Gate Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature TYPICAL NOISE PARAMETERS (TA=25 °C) VDS = 2 V, IDS = 10 mA Frequency NFopt (GHz) (dB) 2 0.30 4 0.32 6 0.34 8 0.37 10 0.42 12 0.47 14 0.56 16 0.70 18 0.87 Rating 5V -3.0 V IDSS 160 µA 14 dBm 150 mW 175 °C - 65 °C to +175 °C GA (dB) 19.0 17.4 15.7 14.3 12.9 11.9 11.4 11.2 10.9 Γopt MAG 0.98 0.84 0.68 0.51 0.38 0.28 0.25 0.32 0.49 ANG 15 30 50 76 107 146 193 250 317 Rn/50 0.40 0.35 0.26 0.19 0.12 0.08 0.07 0.11 0.23 CHIP DIMENSIONS 280 ± 12 D S S 250 ± 12 G Units: Micrometers Chip Thickness: 100 Gate Pad: 55 x 60 Drain Pad: 55 x 60 Source Pad: 55 x 14 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science- Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 10 TRANSCOM TC1102 TYPICAL SCATTERING PARAMETERS (TA=25°°C) 90 60 15 165 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 45 2. 0 0.2 0.4 75 0.8 6 0. 0. 4 0.2 30 15 0 10.0 0 Swp Max 18 GHz 5 13 0 3. 0 4. 0 5. S11 0 12 Mag Max 0.15 Swp Max 18GHz 105 1.0 VDS = 2 V, IDS = 10 mA 0 -180 -15 -10.0 -1 20 2. 0 1.0 6 0. 45 30 Swp Min 2 GHz Swp Max 18GHz 0 3. 0 4. 0 5. S22 0.2 15 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 0.4 0 0 0.2 165 10.0 60 75 -105 -1 35 .0 -2 -0.8 -1.0 90 5 13 0. 4 -0 .6 -3 .0 -4 . -5. 0 0 Swp Max 18 GHz -75 0.075 Per Div 0 -6 Swp Min 2GHz 15 0 -3 0 50 -1 -90 105 0 12 Mag Max 5 S12 5 -4 .4 -0 -165 0.8 2 -0. -180 -15 S11 MAG 0.9909 0.9805 0.9673 0.9524 0.9367 0.9209 0.9057 0.8913 0.8780 0.8659 0.8551 0.8453 0.8366 0.8290 0.8222 0.8163 0.8111 ANG -20.88 -30.94 -40.57 -49.69 -58.26 -66.26 -73.69 -80.57 -86.92 -92.79 -98.22 -103.24 -107.89 -112.20 -116.22 -119.96 -123.45 S21 MAG 4.1640 4.0654 3.9385 3.7916 3.6326 3.4682 3.3038 3.1430 2.9885 2.8417 2.7033 2.5737 2.4526 2.3399 2.2349 2.1373 2.0464 .0 -2 -1.0 Swp Min 2 GHz -0.8 -0 .6 -105 -1 20 0 -6 -90 -75 FREQUENCY (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 .4 -0 5 -4 -1 35 50 -1 1 Per Div 2 -0. -3 0 -3 .0 -4 . -5. 0 0 S21 -10.0 -165 Swp Min 2GHz S12 ANG 163.83 156.02 148.51 141.35 134.56 128.16 122.13 116.45 111.09 106.02 101.22 96.66 92.32 88.16 84.17 80.33 76.64 MAG 0.0305 0.0447 0.0577 0.0694 0.0798 0.0888 0.0966 0.1033 0.1090 0.1139 0.1181 0.1216 0.1247 0.1272 0.1295 0.1313 0.1329 S22 ANG 77.18 71.04 65.20 59.71 54.59 49.85 45.48 41.45 37.74 34.32 31.16 28.24 25.52 22.98 20.61 18.38 16.28 MAG 0.7466 0.7346 0.7193 0.7019 0.6835 0.6650 0.6471 0.6302 0.6146 0.6005 0.5880 0.5770 0.5674 0.5593 0.5525 0.5468 0.5423 ANG -11.01 -16.27 -21.26 -25.95 -30.31 -34.35 -38.08 -41.53 -44.73 -47.70 -50.49 -53.11 -55.59 -57.95 -60.21 -62.39 -64.49 • The data does not include gate, drain and source bond wires. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 11 TC1102 SMALL SIGNAL MODEL, VDS = 2 V, IDS = 10 mA SCHEMATIC Lg Cgd Rg PARAMETERS Ld Parameters Gm Cgs Ri Rd Cds Lg Rds T Parameters 0.0384 nH Rg 0.97 Ohm Cgs Rs 0.222 pF Ri Ls Cgd 1.78 Ohm Rs 1.72 Ohm Ls 0.001 nH Cds 0.061 pF Rds 0.0273 pF Rd Gm 53.3 mS Ld T 1.49 psec 328 Ohm 1.698 Ohm 0.0286 nH CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 12