APTM120DSK57T3 Dual Buck chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies 13 14 Q1 Q2 11 18 22 7 19 10 23 CR1 29 8 30 CR2 31 15 32 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 VDSS = 1200V RDSon = 570mΩ max @ Tj = 25°C ID = 17A @ Tc = 25°C 10 11 12 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single buck of twice the current capability All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 17 13 68 ±30 570 390 22 50 3000 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM120DSK57T3– Rev 0 September, 2004 Absolute maximum ratings APTM120DSK57T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V, ID = 250µA VGS = 0V,VDS = 1200V T j = 25°C VGS = 0V,VDS = 1000V T j = 125°C VGS = 10V, ID = 8.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Typ 3 Min VGS = 10V VBus = 600V ID = 17A Typ 5155 770 130 187 100 500 570 5 ±100 mΩ V nA Max Unit pF nC 15 45 1565 Test Conditions ns 160 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 17A, R G = 5Ω µJ 685 µJ 857 Min Typ Max 1200 Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 25A VGE = 0V trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 25A VR = 600V di/dt =800A/µs µA 20 990 Symbol Characteristic Unit V 120 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 17A, R G = 5Ω Reverse diode ratings and characteristics Max 24 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 17A R G = 5Ω Tf VRRM Min 1200 Unit V Tj = 25°C 250 Tj = 125°C 500 Tc = 80°C Tj = 25°C Tj = 125°C 25 2.3 1.8 Tj = 125°C 0.13 Tj = 25°C 2.3 Tj = 125°C 6 µA A 2.8 V µs µC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2–6 APTM120DSK57T3– Rev 0 September, 2004 Symbol BVDSS APTM120DSK57T3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K Min R 25 1 1 exp B25 / 85 − T T 25 Unit °C/W V 150 125 100 4.7 110 M4 Temperature sensor NTC RT = 2500 -40 -40 -40 Max 0.32 1.2 Typ 68 4080 Max °C N.m g Unit kΩ K T: Thermistor temperature RT : Thermistor value at T 28 17 1 12 APT website – http://www.advancedpower.com 3–6 APTM120DSK57T3– Rev 0 September, 2004 Package outline APTM120DSK57T3 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 50 40 7V 6.5V 30 20 6V 10 5.5V 5 10 15 20 25 60 50 40 30 TJ=25°C 20 10 5V 0 0 VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 70 ID, Drain Current (A) TJ=125°C 30 0 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 8 9 20 Normalized to VGS=10V @ 8.5A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS , Drain to Source Voltage (V) 1.4 TJ =-55°C 0 0.9 0.8 16 12 8 4 0 0 10 20 30 ID, Drain Current (A) 40 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4–6 APTM120DSK57T3– Rev 0 September, 2004 I D, Drain Current (A) V GS=15, 10 & 8V 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=8.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 100 1.2 1.0 0.9 0.8 0.7 limited by RDSon 1ms 10 10ms Single pulse TJ =150°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage 10000 Ciss Coss 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 1200 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 14 I D=17A TJ=25°C 12 V DS=240V 10 VDS=600V 8 V DS =960V 6 4 2 0 0 40 APT website – http://www.advancedpower.com 80 120 160 200 240 Gate Charge (nC) 5–6 APTM120DSK57T3– Rev 0 September, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120DSK57T3 APTM120DSK57T3 Delay Times vs Current t d(off) 160 140 VDS=800V RG=5Ω TJ=125°C L=100µH 60 120 tr and tf (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 80 180 V DS=800V RG =5Ω T J=125°C L=100µH 100 80 60 40 tr 20 td(on) 40 tf 20 0 0 5 10 15 20 25 30 35 5 10 I D, Drain Current (A) 35 4 V DS=800V RG=5Ω T J=125°C L=100µH 2.5 2 Eon Switching Energy (mJ) Eoff 1.5 1 0.5 0 VDS=800V ID=17A TJ=125°C L=100µH 3 Eoff 2 Eon 1 0 5 10 15 20 25 30 35 0 5 10 I D, Drain Current (A) 15 20 25 30 35 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 225 200 175 150 ZCS ZVS 125 100 VDS=800V D=50% RG=5Ω T J=125°C T C=75°C 75 50 25 Hard switching 0 4 6 8 10 12 14 ID, Drain Current (A) 16 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM120DSK57T3– Rev 0 September, 2004 Switching Energy (mJ) 30 Switching Energy vs Gate Resistance Switching Energy vs Current 3 Frequency (kHz) 15 20 25 I D, Drain Current (A)