GaAlAs High power IR LED Emitters (660nm/905nm) PDI-E832 PACKAGE DIMENSIONS INCH [mm] .063 [1.60] .167 [4.24] C L .104 [2.64] C L .055 [1.40] RED L.E.D. CHIP .025 [0.64] I.R. L.E.D. CHIP .060 [1.52] CL METALIZED CERAMIC WIRE BONDS .250 [6.35] ENCAPSOLATE CONTACT B CONTACT A Metalized Ceramic Package FEATURES DESCRIPTION APPLICATIONS • Low Cost • 660 nm +/- 3nm • 2 drive line The PDI-E832 is a two drive line dual emitter oximeter component. The 660 and 905 nm GaAlAs infrared emitters are mounted in a glob toped. The LEDs are bias separately by alternating polarity on the bias pins. • Oximeter Probes • Finger Clamps • Reusable probes ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL PARAMETER MIN MAX UNITS Pd Power Dissipation 250 mW If Continuous Forward Current 30 mA Ip Peak Forward Current 200 mA Vr Reverse Voltage 4 V TSTG Storage Temperature -40 +80 TO Operating Temperature -40 +80 °C °C TS Soldering Temperature* +240 °C SCHEMATIC A 905 nm LED 660 nm LED B * For 3 seconds max using a heat sink ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTIC TEST CONDITIONS Po Iv Vf lp Radiant Flux Luminous Intensity Forward Voltage Peak Wavelength Spectral Halfwidth Rise Time Fall Time If = 20 mA If= 20 mA If = 20 mA If = 20 mA If = 20 mA If = 20 mA If = 20 mA Δl tr tf 660 nm TYP MAX 2.4 30 1.8 2.4 658 661 664 25 0.1 0.04 MIN 1.8 20 MIN 1.2 895 905 nm TYP MAX 1.8 1.2 905 50 1.4 0.7 UNITS 1.5 915 Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com mW mcd V nm nm uS uS