AON4603 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel The AON4603 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4603 is Pb-free (meets ROHS & Sony 259 specifications). AON4603L is a Green Product ordering option. AON4603 and AON4603L are electrically identical. p-channel VDS (V) = 30V ID = 4A -30V -3.6A RDS(ON) < 75mΩ < 100mΩ RDS(ON) < 115mΩ < 180mΩ (VGS= ±10V) (VGS = ±10V) (VGS = ±4.5V) D1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 n-channel B IDM TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain TA=25°C 4 Current A 3.2 ID TA=70°C Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics: p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C G2 G1 DFN2X3 Pulsed Drain Current D2 PD TJ, TSTG 12 1.9 1.2 -55 to 150 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL p-channel Max p-channel -30 ±20 -3.6 -2.9 Units V V A -12 2.1 1.3 -55 to 150 W °C Typ 54 102 58 Max 65 125 70 Units °C/W °C/W °C/W Typ 50 85 41 Max 60 110 50 Units °C/W °C/W °C/W AON4603 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=24V, VGS=0V 30 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=4.5V, ID=2A VDS=5V, ID=4A Forward Transconductance Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr Typ 1 12 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=4A VGS=10V, VDS=15V, RL=3.75Ω, RGEN=3Ω IF=4A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs Units V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=4A Max 1.9 55 78 95 5.4 0.82 1 5 100 3 75 µA nA V A mΩ 115 mΩ 1 2.5 S V A 200 40 20 2.3 260 6.5 3.1 1.2 1.6 3.3 2.5 13.2 1.7 8.5 4 nC nC nC nC ns ns ns ns 9.4 3.5 12 ns nC 3.5 pF pF pF Ω 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0 : March 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha and Omega Semiconductor, Ltd. AON4603 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) 10 15 10V 5V 8V 12 VDS=5V 8 6V 4.5V 9 6 6 ID(A) ID (A) 4V 4 3.5V 125° 2 3 25°C VGS=4.5V, ID=2A VGS=3V 0 0 0 1 2 3 4 5 1.5 2 2.5 3.5 4 4.5 5 5.5 6 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 120 1.8 100 Normalized On-Resistance 110 RDS(ON) (mΩ) 3 VGS=4.5V 90 80 70 60 50 VGS=10V 40 VGS=10V ID=4A 1.6 1.4 VGS=4.5V ID=2A 1.2 1 0.8 0 2 4 6 8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 250 ID=4A 200 1.0E+00 125° IS (A) RDS(ON) (mΩ) 1.0E-01 150 125°C 100 1.0E-02 25° 1.0E-03 50 1.0E-04 25°C 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AON4603 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) 400 10 VDS=15V ID=4A Capacitance (pF) VGS (Volts) 8 6 4 2 300 Ciss 200 Coss Crss 100 VGS=4.5V, ID=2A 0 0 0 1 2 3 4 5 6 7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 TJ(Max)=150°C TA=25°C RDS(ON) limited 100µs 20 25 30 TJ(Max)=150°C TA=25°C 15 10µs Power (W) ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 5 1ms 0.1s 10ms 1.0 10 1s 5 10s DC 0.1 0.1 1 10 0 0.001 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=65°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha and Omega Semiconductor, Ltd. 100 1000 AON4603 P-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions Min ID=-250µA, VGS=0V VDS=-24V, VGS=0V -30 VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-3.6A Static Drain-Source On-Resistance gFS VSD IS VGS=-4.5V, I D=-2A VDS=-5V, ID=-3.6A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg(10) Total Gate Charge(10V) Qg(4.5) Total Gate Charge(4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge -1 -12 TJ=125°C VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-3.6A VGS=-10V, VDS=-15V, RL=4.2Ω, RGEN=3Ω IF=-3.6A, dI/dt=100A/µs IF=-3.6A, dI/dt=100A/µs Max Units V TJ=55°C RDS(ON) DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Typ -2 81 115 136 4.8 -0.82 -1 -5 ±100 -3 100 µA nA V A mΩ 180 mΩ -1 -2.5 S V A 260 55 44 4.3 340 5.8 3 0.78 1.6 7 6 15 7.5 12.5 5.5 7 4 nC nC nC nC ns ns ns ns 15 ns nC 6.5 pF pF pF Ω A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0 : March 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AON4603 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 20 -10V -7V VDS=-5V -9V 25°C 6 -5V -ID(A) -ID (A) -6V -8V 15 8 10 VGS=-4.5V VGS=-10V, VDS=-5V 125°C 4 -12 -4V 5 2 -3.5V VGS=-4.5V, I D=-2A -3V 0 0 0 1 2 3 4 5 1 2 5 6 1.6 Normalized On-Resistance RDS(ON) (mΩ) 4 340 200 VGS=-4.5V 150 100 VGS=-10V 50 VGS=-10V ID=-3.6A 1.4 6.5 1.2 VGS=-4.5V ID=-2A 1 0.8 0 1 2 3 4 5 6 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 300 1.0E+01 250 1.0E+00 ID=-3.6A 1.0E-01 200 125°C -IS (A) RDS(ON) (mΩ) 3 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 150 100 1.0E-02 125°C 25°C 1.0E-03 1.0E-04 25°C 50 1.0E-05 1.0E-06 0 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AON4603 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 500 10 VDS=-15V ID=-3.6A 400 6 4 VGS=-10V, VDS=-5V Capacitance (pF) -VGS (Volts) 8 2 Ciss 300 Coss 100 VGS=-4.5V, I D=-2A Crss 0 0 0 1 2 3 4 5 6 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 340 20 TJ(Max)=150°C TA=25°C TJ(Max) =150°C 6.5 TA=25°C 15 10.0 10µs RDS(ON) limited 0.1s 1ms 100µs 1.0 Power (W) -ID (Amps) 5 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10ms 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) -VDS (Volts) 10 10 5 1s ZθJA Normalized Transient Thermal Resistance -12 200 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000