AO4441 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4441 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4441 is Pb-free (meets ROHS & Sony 259 specifications). AO4441L is a Green Product ordering option. AO4441 and AO4441L are electrically identical. VDS (V) = -60V ID = -4 A (VGS = -10V) RDS(ON) < 100mΩ (VGS = -10V) RDS(ON) < 130mΩ (VGS = -4.5V) D SOIC-8 Top View S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V -20 3.1 W 2 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -4 TA=25°C Power Dissipation A Maximum -60 RθJA RθJL Typ 24 54 21 Max 40 75 30 Units °C/W °C/W °C/W AO4441 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -60 TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -20 RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-3A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-4A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd tD(on) tr Turn-On Rise Time ±100 nA -3 V A 100 130 102 130 mΩ mΩ 10 -0.77 930 VGS=0V, VDS=-30V, f=1MHz 85 VGS=0V, VDS=0V, f=1MHz 7.2 S -1 V -4 A 1120 pF pF 35 SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs -2.1 80 VGS=-10V, ID=-4A µA -5 IGSS gFS Units V VDS=-48V, VGS=0V VSD Max -1 VGS(th) IS Typ VGS=-10V, VDS=-30V, ID=-4A pF 9 Ω 16 20 nC 8 10 nC 2.5 nC Gate Drain Charge 3.2 nC Turn-On DelayTime 8 ns 3.8 ns VGS=-10V, VDS=-30V, RL=7.5Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs 27 Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs 32 31.5 ns 7.5 ns 35 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any ien given application application depends depends on on thethe user's user's specific specific board board design. design. TheThe current current rating rating is based is based on on thethe t ≤ 10s t ≤ 10s thermal thermal resistance resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. Rev 1: Sept 2005 AO4441 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 20 -ID (A) 15 -6.0V -4.5V -5.0V -4.0V 10 VDS=-5V 8 -3.5V 5 6 -ID(A) -10V 4 VGS=-3.0V 2 0 0 1 2 3 125°C 4 25°C 0 5 1 1.5 -VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 2 Normalized On-Resistance VGS=-4.5V 100 RDS(ON) (mΩ) 2.5 -VGS(Volts) Figure 2: Transfer Characteristics 110 90 VGS=-10V 80 1.8 VGS=-10V ID=-4A 1.6 1.4 VGS=-4.5V ID=-3A ID=-3A 1.2 1 0.8 70 0 2 4 6 8 0 10 200 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 ID=-4A 180 1.0E+00 125°C 160 140 120 100 125°C 1.0E-01 -IS (A) RDS(ON) (mΩ) 2 1.0E-02 1.0E-03 1.0E-04 25°C 80 25°C 1.0E-05 60 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-06 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4441 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 1500 VDS=-30V ID=-4A Ciss Capacitance (pF) -VGS (Volts) 8 6 4 1000 500 2 Coss 0 0 10 0 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 10ms 0.1s 1s 10s 1 60 TJ(Max)=150°C TA=25°C 20 0 0.001 10 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 50 10 -VDS (Volts) 10 40 DC 0.1 0.1 30 30 10µs 100µs 1ms 1.0 20 40 TJ(Max)=150°C, TA=25°C 10.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000