STK730P Semiconductor Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=400V(Min.) Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=1.0Ω(Max.) Ordering Information Type NO. Marking STK730P Package Code STK730 TO-220AB-3L Outline Dimensions unit : mm Φ3.90 Max. 8.50~8.90 1.17~1.37 1.17 Min. 0.88 Max. 2.54 Typ. 2.54 Typ. 1 2 0.43 Max. 3 2.87 Max. 4.50~4.70 12.16~12.36 3.14 Typ. 13.50~13.90 28.50~29.10 14.90~15.30 9.80~10.20 KSD-T0P008-000 PIN Connections 1. Gate 2. Drain 3. Source 1 STK730P Absolute maximum ratings (Tc=25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 400 V Gate-source voltage VGSS ±30 V Tc=25℃ 5.5 A Tc=100℃ 3.4 A * IDP 22 A Drain power dissipation PD 71 W Drain current (DC) Drain current (Pulsed) ID Avalanche current (Single) ② IAS 5.5 A Single pulsed avalanche energy ② EAS 270 mJ Avalanche current (Repetitive) ① IAR 5.5 A Repetitive avalanche energy ① EAR 7.3 mJ TJ Tstg 150 -55~150 °C °C Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Symbol Typ. Max Junction-case Rth(J-C) - 1.75 Junction-ambient Rth(J-A) - 62.5 KSD-T0P008-000 Unit ℃/W 2 STK730P Electrical Characteristics Characteristic (Tc=25°C) Symbol Drain-source breakdown voltage V(BR)DSS Gate threshold voltage VGS(th) Test Condition Min. Typ. Max. Unit ID=250 ㎂, VGS=0 400 - - V ID=250 ㎂, VGS=5V 2.0 - 4.0 V Drain-source cut-off current IDSS VDS=400V, VGS=0 - - 10 μA Gate leakage current IGSS VDS=0V, VGS=±30V - - ±100 nA Drain-source on-resistance ④ RDS(on) VGS=10V, ID=2.75A - 0.8 1 Ω Forward transfer conductance ④ gfs VDS=10V, ID=2.75A - 3.6 - S - 550 825 - 46 70 - 8.4 13 - 13 - - 65 - - 21 - - 38 - - 16 24 - 2.5 3.8 - 6.6 10 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time VGS=0V, VDS=25V f=1 MHz tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD=200V, ID=5.5A RG=12Ω ③④ VDS=200V, VGS=10V ID=5.5A ③④ Source-Drain Diode Ratings and Characteristics Characteristic Symbol Source current (DC) IS Test Condition pF ns nC (Tc=25°C) Min Typ Max - - 5.5 - - 22 Unit Source current (Pulsed) ① ISP Integral reverse diode in the MOSFET Forward voltage ④ VSD VGS=0V, IS=5.5A - - 1.5 V Reverse recovery time trr - 270 - ns Reverse recovery charge Qrr Is=5.5A, VGS=0V dIs/dt=100A/㎲ - 2.16 - uC A Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=13.7mH, IAS=5.5A, VDD=50V, RG=27Ω ③ Pulse Test : Pulse Width≤ 400 ㎲, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T0P008-000 3 STK730P Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS 1 Fig. 4 IS - VSD Fig. 3 RDS(on) - ID Fig. 6 VGS - QG Fig. 5 Capacitance - VDS ℃ KSD-T0P008-000 4 STK730P Fig. 8 RDS(on) - TJ Fig. 7 VDSS - TJ ㎂ C C Fig. 9 Fig. 10 Safe Operating Area ID - TC * KSD-T0P008-000 5 STK730P Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T0P008-000 6 STK730P Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform rr KSD-T0P008-000 7 STK730P The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T0P008-000 8