MICROSEMI APT8DQ60KCTG

600V 8A
APT8DQ60KCT
APT8DQ60KCTG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
(KCT)
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular TO-220 Package
• Cooler Operation
• Low Forward Voltage
• Higher Reliability Systems
• Low Leakage Current
• Increased System Power
Density
• PFC
• Avalanche Energy Rated
MAXIMUM RATINGS
Symbol
VR
Characteristic / Test Conditions
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 128°C, Duty Cycle = 0.5)
1
2
3
1
3
2
1 - Anode 1
2 - Common Cathode
Back of Case - Cathode
3 - Anode 2
APT8DQ60KCT(G)
UNIT
600
Volts
8
16
RMS Forward Current (Square wave, 50% duty)
IFSM
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
EAVL
Avalanche Energy (1A, 40mH)
TL
0
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
TJ,TSTG
-22
All Ratings Per Leg: TC = 25°C unless otherwise specified.
VRRM
IF(RMS)
TO
Amps
110
20
mJ
-55 to 175
Operating and StorageTemperature Range
°C
300
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
MIN
TYP
MAX
IF = 8A
2.0
2.4
IF = 16A
2.5
IF = 8A, TJ = 125°C
1.5
VR = 600V
Microsemi Website - http://www.microsemi.com
Volts
25
VR = 600V, TJ = 125°C
500
16
UNIT
µA
pF
7-2006
VF
Characteristic / Test Conditions
053-4211 Rev E
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT8DQ60KCT(G)
Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 8A, diF/dt = -200A/µs
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
VR = 400V, TC = 25°C
Maximum Reverse Recovery Current
trr
IRRM
IF = 8A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
IF = 8A, diF/dt = -1000A/µs
Maximum Reverse Recovery Current
VR = 400V, TC = 125°C
MIN
TYP
MAX
UNIT
-
14
-
19
-
17
-
2
-
90
ns
-
160
nC
-
3
-
43
ns
-
250
nC
-
11
Amps
MIN
TYP
ns
nC
-
-
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RθJC
WT
Torque
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Package Weight
MAX
UNIT
2.7
°C/W
0.07
oz
1.9
g
Maximum Mounting Torque
10
lb•in
1.1
N•m
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
2.5
D = 0.9
2.0
0.7
1.0
0.5
Note:
0.3
PDM
1.5
0.1
0.05
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0
10-5
t
SINGLE PULSE
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
7-2006
TJ (°C)
053-4211 Rev E
t1
t2
0.5
TC (°C)
1.93
0.773
Dissipated Power
(Watts)
0.00078
ZEXT
Z JC, THERMAL IMPEDANCE (°C/W)
θ
3.0
0.0246
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
TYPICAL PERFORMANCE CURVES
25
TJ = 175°C
20
15
TJ = 125°C
10
TJ = 25°C
5
0
TJ = -55°C
0.5 1.0
1.5 2.0
2.5 3.0 3.5
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
0
Qrr, REVERSE RECOVERY CHARGE
(nC)
400
T = 125°C
J
V = 400V
R
350
16A
300
250
8A
200
150
4A
100
50
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
1.2
16A
80
8A
4A
60
40
20
14
T = 125°C
J
V = 400V
16A
R
12
10
8
6
8A
4
4A
2
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
20
Duty cycle = 0.5
T = 175°C
18
trr
J
16
trr
IRRM
0.8
R
100
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Qrr
1.0
APT8DQ60KCT(G)
T = 125°C
J
V = 400V
0
14
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to X000A/µs)
trr, REVERSE RECOVERY TIME
(ns)
120
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT
(A)
30
0.6
12
10
8
0.4
Qrr
0.2
6
4
2
0.0
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
50
40
7-2006
30
20
10
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
053-4211 Rev E
CJ, JUNCTION CAPACITANCE
(pF)
60
APT8DQ60KCT(G)
Vr
diF /dt Adjust
+18V
APT6038BLL
0V
D.U.T.
30µH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
3
0.25 IRRM
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-220 (KCT) Package Outline
e3 100% Sn
1.39 (.055)
0.51 (.020)
16.51 (.650)
14.23 (.560)
Cathode
4.08 (.161) Dia.
3.54 (.139)
3.42 (.135)
2.54 (.100)
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
6.85 (.270)
5.85 (.230)
6.35 (.250)
MAX.
053-4211 Rev E
7-2006
0.50 (.020)
0.41 (.016)
2.92 (.115)
2.04 (.080)
4.82 (.190)
3.56 (.140)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.38 (.015)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Anode
Cathode
Anode
1.77 (.070) 3-Plcs.
1.15 (.045)